Measurement of atomic hydrogen flow density during GaAs surface cleaning

2008 ◽  
Author(s):  
V. A. Kagadei ◽  
E. V. Nefyodtsev ◽  
D. I. Proskurovski ◽  
S. V. Romanenko
Keyword(s):  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Gaas Surface ◽  
Flow Density ◽  
Hydrogen Flow

Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment

2004 ◽  
Author(s):  
E. Anishchenko ◽  
V. Diamant ◽  
Valerii A. Kagadei ◽  
E. Nefeyodtsev ◽  
Konstantin V. Oskomov ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Gaas Surface ◽  
Hydrogen Flow ◽  
Flow Treatment

The effect of atomic hydrogen flow on electrical resistance of the transition metal films

2004 ◽  
Vol 113 (3) ◽  
pp. 293-300 ◽  
Author(s):  
V. Kagadei ◽  
E. Nefyodtsev ◽  
D. Proskurovsky ◽  
Sv. Romanenko ◽  
N. Shevchenko ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electrical Resistance ◽  
Atomic Hydrogen ◽  
Metal Films ◽  
Hydrogen Flow

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L287-L289 ◽  
Author(s):  
Yong Jin Chun ◽  
Takeyoshi Sugaya ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Temperature Surface

GaAs surface cleaning by low energy hydrogen ion beam treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
N. Razek ◽  
K. Otte ◽  
T. Chassé ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface ◽  
Ion Beam Treatment

Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

2001 ◽  
Vol 90 (8) ◽  
pp. 3856-3862 ◽  
Author(s):  
T. Akatsu ◽  
A. Plössl ◽  
R. Scholz ◽  
H. Stenzel ◽  
U. Gösele
Keyword(s):  
Wafer Bonding ◽  
Atomic Hydrogen ◽  
Compound Semiconductors ◽  
Surface Cleaning

Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO3Treatment

1999 ◽  
Vol 38 (Part 1, No. 7A) ◽  
pp. 3982-3985
Author(s):  
Takuma Tanimoto ◽  
Isao Ohbu ◽  
Hiroshi Ohta ◽  
Shinichiro Takatani
Keyword(s):  
Leakage Current ◽  
Surface Cleaning ◽  
Gaas Surface ◽  
Reverse Leakage Current
Sign in / Sign up

Export Citation Format

Share Document