Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy

1993 ◽  
Vol 11 (3) ◽  
pp. 1007 ◽  
Author(s):  
S. R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Measurement ◽  
Molecular Beam ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy ◽  
Semiconductor Substrate

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

1995 ◽  
Vol 66 (10) ◽  
pp. 4977-4980 ◽  
Author(s):  
T. P. Pearsall ◽  
Stevan R. Saban ◽  
James Booth ◽  
Barrett T. Beard ◽  
S. R. Johnson
Keyword(s):  
Temperature Measurement ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy

Precision of Non-invasive Temperature Measurement by Diffuse Reflectance Spectroscopy

1995 ◽  
Vol 406 ◽  
Author(s):  
Zhongze Wang ◽  
Siu L. Kwan ◽  
T. P. Pearsall ◽  
James Booth ◽  
Barrett T. Beard ◽  
...  
Keyword(s):  
Standard Deviation ◽  
Temperature Measurement ◽  
Real Time ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy ◽  
Optical Technique ◽  
Semiconductor Processing ◽  
Non Invasive ◽  
Gaas Substrates

AbstractWe demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T< 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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