Substrate temperature measurement by absorption-edge spectroscopy during molecular beam epitaxy of narrow-band gap semiconductor films

1997 ◽  
Vol 15 (2) ◽  
pp. 329 ◽  
Author(s):  
T. J. de Lyon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Measurement ◽  
Band Gap ◽  
Absorption Edge ◽  
Molecular Beam ◽  
Narrow Band ◽  
Semiconductor Films

Dielectric Function of “Narrow” Band Gap InN

2002 ◽  
Vol 743 ◽  
Author(s):  
R. Goldhahn ◽  
S. Shokhovets ◽  
V. Cimalla ◽  
L. Spiess ◽  
G. Ecke ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Dielectric Function ◽  
First Principles ◽  
Molecular Beam ◽  
Narrow Band ◽  
Spectral Shape ◽  
Strong Increase ◽  
Sapphire Substrates ◽  
Ingan Alloys

ABSTRACTSpectroscopic ellipsometry studies in the energy range from 0.7 up to 5.5 eV were carried out in order to determine the dielectric function (DF) of ‘narrow’ band gap (< 1 eV) single-crystalline InN films grown by molecular beam epitaxy on sapphire substrates. The imaginary part of the DF is characterized by a strong increase immediately above the band gap and then by a nearly constant value up to 4 eV. Pronounced structures above 4 eV are attributed to transitions along the L-M direction in the Brillouin-zone as a comparison with first-principles calculations indicates. In contrast, sputtered layers (band gap ∼1.9 eV) studied for comparison show a completely different spectral shape of the DF. Finally, DF's of high In-content InGaN alloys are presented, providing further evidence that InN is a “narrow” band gap semiconductor.

A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy

1991 ◽  
Vol 69 (3-4) ◽  
pp. 422-426 ◽  
Author(s):  
M. K. Weilmeier ◽  
K. M. Colbow ◽  
T. Tiedje ◽  
T. Van Buuren ◽  
Li Xu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Measurement ◽  
Band Gap ◽  
Measurement Technique ◽  
Molecular Beam ◽  
Back Surface ◽  
Gaas Substrates ◽  
Diffuse Reflectivity ◽  
Temperature Measurement Technique ◽  
Better Than

A new optical temperature measurement technique for use in molecular beam epitaxy is demonstrated with GaAs substrates. The temperature of the semiconductor is inferred from its band gap, which is measured by the diffuse reflectivity of the substrate that is textured on the back surface. The method has a sensitivity of better than 2 °C, and an absolute accuracy limited by the accuracy with which the band gap is known as a function of temperature. It was found to be necessary to calibrate the measurement technique with a thermocouple in contact with the sample in order to achieve satisfactory accuracy at high temperatures. Measurements of the optical absorption edge of GaAs, show that the slope of the Urbach edge is independent of temperature from room temperature to 450 °C.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Determination and modeling of the optical constants of direct band gap Be x Zn1−x Te grown by molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 706-709
Author(s):  
M. Muñoz ◽  
O. Maksimov ◽  
M. C. Tamargo ◽  
M. R. Buckley ◽  
F. C. Peiris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Optical Constants ◽  
Molecular Beam ◽  
Direct Band Gap ◽  
Direct Band
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