Substrate temperature measurement in a molecular beam epitaxy chamber usingin situGaAs photoluminescence monitoring

1991 ◽  
Vol 59 (10) ◽  
pp. 1215-1217 ◽  
Author(s):  
C. J. Sandroff ◽  
F. S. Turco‐Sandroff ◽  
L. T. Florez ◽  
J. P. Harbison
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Measurement ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Chamber

scholarly journals The Structure of Al/GaAs Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
C. Nelson ◽  
R. Gronsky ◽  
J. Washburn ◽  
R. Ludeke
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Molecular Beam Epitaxy Chamber

ABSTRACTThe structure of Al/GaAs interfaces was investigated by high resolution electron microscopy. The Al layers Were deposited in a molecular beam epitaxy chamber with a vacuum base pressure of <1×10∼8 Pa. The GaAs substrate temperature varied during Al deposition from -30°C to 400°C. Deposition of Al on cold substrates £25°C resulted in epitaxial growth of (001) Al on (001) GaAs. Droplets of Ga were observed in samples with the substrate temperature at -30°C (1×2) and 0°C (c(2×8)). Postannealing of the last sample caused formation of the AlGaAs phase. Deposition of Al on hot substrates (150°C and 400°C) resulted in the formation of the AlGaAs phase, which separated (110) oriented Al from (001)GaAs.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

scholarly journals Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

2006 ◽  
Vol 88 (8) ◽  
pp. 082114 ◽  
Author(s):  
A. Armstrong ◽  
C. Poblenz ◽  
D. S. Green ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam
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