Precision of Non-invasive Temperature Measurement by Diffuse Reflectance Spectroscopy
Keyword(s):
AbstractWe demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T< 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.
1995 ◽
Vol 66
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pp. 4977-4980
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2010 ◽
Vol 51
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pp. 12-17
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1993 ◽
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pp. 1007
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2014 ◽
Vol 41
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pp. 541-555
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2012 ◽
Vol 438
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pp. 33-44
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2015 ◽
Vol 22
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pp. 357-365
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