Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

1995 ◽  
Vol 66 (10) ◽  
pp. 4977-4980 ◽  
Author(s):  
T. P. Pearsall ◽  
Stevan R. Saban ◽  
James Booth ◽  
Barrett T. Beard ◽  
S. R. Johnson
1995 ◽  
Vol 406 ◽  
Author(s):  
Zhongze Wang ◽  
Siu L. Kwan ◽  
T. P. Pearsall ◽  
James Booth ◽  
Barrett T. Beard ◽  
...  

AbstractWe demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T< 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.


2006 ◽  
Vol 39 (18) ◽  
pp. 41-46
Author(s):  
Emilie Péry ◽  
Walter C.P.M. Blondel ◽  
Cédric Thomas ◽  
Jacques Didelon ◽  
François Guillemin

2014 ◽  
Vol 809-810 ◽  
pp. 890-894
Author(s):  
Dan Li ◽  
Lian Wei Shan ◽  
Gui Lin Wang ◽  
Li Min Dong ◽  
Wei Li ◽  
...  

Boron-BiVO4 samples were synthesized by sol-gel method. They were characterized by UV-vis diffuse reflectance spectroscopy, X-ray diffraction. Photocatalytic activity of the obtained BiVO4 samples was investigated through degrading methylene blue (MB). The results reveal that boron-BiVO4 catalysts have monoclinic scheelite structure. The BiVO4 and Co-BiVO4 photocatalysts were responsive to visible light. Co-BiVO4 photocatalyst showed higher photocatalytic activity than pure BiVO4, resulting in the significantly improved efficiency of degradation of MB.


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