Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithography

1993 ◽  
Vol 11 (6) ◽  
pp. 2570 ◽  
Author(s):  
Paul B. Fischer
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Magnetic Force ◽  
Magnetic Force Microscope ◽  
Ultrahigh Resolution

Ultrahigh resolution of calixarene negative resist in electron beam lithography

1996 ◽  
Vol 68 (9) ◽  
pp. 1297-1299 ◽  
Author(s):  
J. Fujita ◽  
Y. Ohnishi ◽  
Y. Ochiai ◽  
S. Matsui
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ultrahigh Resolution

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ammonium Hydroxide ◽  
Hydrogen Silsesquioxane ◽  
Ultrahigh Resolution ◽  
Patterned Media ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Nanodot Arrays

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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