The role of heat transfer during reactive-ion etching of polymer films

1990 ◽  
Vol 8 (6) ◽  
pp. 1985 ◽  
Author(s):  
B. C. Dems
Keyword(s):  
Heat Transfer ◽  
Polymer Films ◽  
Reactive Ion Etching ◽  
Ion Etching

Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

2015 ◽  
Vol 1109 ◽  
pp. 64-68
Author(s):  
Q. Humayun ◽  
U. Hashim
Keyword(s):  
Reactive Ion Etching ◽  
Electrical Characterization ◽  
Coated Sample ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Etching Technique ◽  
Ion Etching ◽  
Gap Spacing ◽  
Gap Structure

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

Kinetics of Reactive Ion Etching of Polymers in an Oxygen Plasma: The Importance of Direct Reactive Ion Etching

1993 ◽  
Vol 334 ◽  
Author(s):  
Sandra W. Graham ◽  
Christoph SteinbrüChel
Keyword(s):  
Polymer Films ◽  
Langmuir Probe ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Surface Chemical ◽  
Ion Etching ◽  
Modified Model ◽  
Physical Sputtering ◽  
The Relationship ◽  
Kinetics Of

AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching proposed by Joubert et al. (J. Appl. Phys. 65, 5096 (1989)). A proper description of the results requires that this model be modified by including a term due to direct reactive ion etching and physical sputtering. The contribution by direct reactive ion etching to the overall etching turns out to be significant under all conditions and even dominant at the lowest pressures. The modified model should be applicable to the etching of polymers in other types of reactors, especially highplasma- density reactors. The relationship between these results and the anisotropic patterning of polymer films is also discussed.

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