The effect of aluminum masks on the plasma etch rates of polysilicon and silicon nitride

1990 ◽  
Vol 8 (1) ◽  
pp. 5 ◽  
Author(s):  
Gregory W. Grynkewich
Keyword(s):  
Silicon Nitride ◽  
Plasma Etch ◽  
Etch Rates

Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants

2006 ◽  
Vol 45 (11) ◽  
pp. 8873-8875 ◽  
Author(s):  
Tetsuo Ono ◽  
Hideki Takahashi ◽  
Keizo Kinoshita ◽  
Nobutoshi Fujii ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Porous Silica ◽  
Dielectric Constants ◽  
Plasma Etch ◽  
Etch Rates

Comparison of ICl and IBr for Dry Etching of III-Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Microwave Power ◽  
Etch Rate ◽  
Product Formation ◽  
Bond Breaking ◽  
Weakly Bound ◽  
Preferential Loss ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 µm/min. These rates are much higher than with Cl2/Ar, CH4/H2/Ar or other plasma chemistries. InN etch rates up to 1.15 µm/min and 0.7 µm/min for In0.5Ga0.5N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 µm/min for GaN to 0.3 µm/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of IC1 and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over A1N with IC1 and IBr are still lower than with Cl2- only.

Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

1988 ◽  
Vol 135 (1) ◽  
pp. 268-269 ◽  
Author(s):  
T. H. Fedynyshyn ◽  
G. W. Grynkewich ◽  
R. H. Dumas
Keyword(s):  
Etch Rate ◽  
Plasma Etch ◽  
Etch Rates

Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces

1987 ◽  
Vol 108 ◽  
Author(s):  
Son Van Nguyen ◽  
Mike Kerbaugh
Keyword(s):  
Silicon Nitride ◽  
Depth Profile ◽  
Etch Rate ◽  
Hydrogen Diffusion ◽  
Annealing Treatment ◽  
Film Deposition ◽  
Nuclear Reaction Analysis ◽  
Nitride Film ◽  
Rate Variation ◽  
Plasma Etch

ABSTRACTA Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF4 + O2 (8% O2) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate.

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

Optical Spectroscopy Applied to the Study of Plasma Etching

1980 ◽  
Vol 34 (1) ◽  
pp. 31-33 ◽  
Author(s):  
R. G. Frieser ◽  
J. Nogay
Keyword(s):  
Optical Spectroscopy ◽  
Plasma Etching ◽  
Spectral Lines ◽  
Plasma Process ◽  
Plasma Etch ◽  
Etch Rates ◽  
Deposition Processes

The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication

1995 ◽  
Vol 386 ◽  
Author(s):  
David Ziger ◽  
Susan Vitkavage ◽  
Charles Oberdorfer ◽  
Juli Eisenberg ◽  
Michael Hughes
Keyword(s):  
Nitric Acid ◽  
Silicon Nitride ◽  
Acid Solution ◽  
Nitric Acid Solution ◽  
Device Fabrication ◽  
Reaction Products ◽  
One Step ◽  
Wet Chemical ◽  
Etch Rates

ABSTRACTAbstract Wet chemical removal of a silicon nitride/silicon Poly Buffer LOCUS (PBL) film stack with a phosphoric/nitric acid solution was characterized. Though silicon nitride etch rates remain constant, silicon etch rates decrease as a function of loading which severely limits the usable lifetime of the bath. This is caused by buildup of etching products which limits the amount of silicon that can be dissolved in the solution. Addition of HF to the phosphoric/nitric acid solution enhances the dissolution chemistry presumably by decomposing the silica reaction products and shifting the equilibrium. Characterization of this process was done to determine whether it could be applied towards PBL removal. Depending on the relative amounts of HF and HNO3 added, silicon etch rates could be enhanced by two orders of magnitude (200–400A/min) and silicon nitride etch rates by a factor of two. Selectivities for etching silicon to oxide and silicon nitride to oxide were typically between 8–12:1 and 8–20:1 respectively.

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