Relation between the RF discharge parameters and plasma etch rates, selectivity, and anisotropy

1984 ◽  
Vol 2 (4) ◽  
pp. 1537-1549 ◽  
Author(s):  
C. B. Zarowin
Keyword(s):  
Rf Discharge ◽  
Plasma Etch ◽  
Discharge Parameters ◽  
Etch Rates

Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants

2006 ◽  
Vol 45 (11) ◽  
pp. 8873-8875 ◽  
Author(s):  
Tetsuo Ono ◽  
Hideki Takahashi ◽  
Keizo Kinoshita ◽  
Nobutoshi Fujii ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Porous Silica ◽  
Dielectric Constants ◽  
Plasma Etch ◽  
Etch Rates

Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

1988 ◽  
Vol 135 (1) ◽  
pp. 268-269 ◽  
Author(s):  
T. H. Fedynyshyn ◽  
G. W. Grynkewich ◽  
R. H. Dumas
Keyword(s):  
Etch Rate ◽  
Plasma Etch ◽  
Etch Rates

Measurements of striation formation time in an N2 α RF discharge

1997 ◽  
Vol 58 (2) ◽  
pp. 193-204 ◽  
Author(s):  
S. M. A. DURRANI ◽  
P. VIDAUD ◽  
D. R. HALL
Keyword(s):  
Theoretical Model ◽  
Charge Density ◽  
Space Charge ◽  
Electron Energy ◽  
Critical Value ◽  
Input Power ◽  
Formation Time ◽  
Rf Discharge ◽  
Electrode Separation ◽  
Discharge Parameters

Measurements have been made of the striation formation time of an α-type RF discharge in nitrogen as a function of pressure, RF frequency, electrode separation and input power. A theoretical model is proposed that yields electron energy and density and striation formation time, given the measured discharge parameters of interelectrode voltage and separation, gas pressure and RF frequency. It is found that increasing the pressure and the electrode separation increase the striation formation time, while increasing the power and the RF frequency decrease the striation formation time. The model predicts that striations in the RF discharge are formed when the plasma charge density reaches some critical value at which the space charge distorts the interelectrode field.

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

Optical Spectroscopy Applied to the Study of Plasma Etching

1980 ◽  
Vol 34 (1) ◽  
pp. 31-33 ◽  
Author(s):  
R. G. Frieser ◽  
J. Nogay
Keyword(s):  
Optical Spectroscopy ◽  
Plasma Etching ◽  
Spectral Lines ◽  
Plasma Process ◽  
Plasma Etch ◽  
Etch Rates ◽  
Deposition Processes

The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

scholarly journals Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas

1998 ◽  
Vol 537 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

AbstractPatterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 μm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3/Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AIN, and InN as a function of BCl3/C12 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AIN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

A comparison of the electron beam sensitivities and relative oxygen plasma etch rates of various organosilicon polymers

1985 ◽  
Vol 3 (1-4) ◽  
pp. 279-291 ◽  
Author(s):  
E. Babich ◽  
J. Paraszczak ◽  
M. Hatzakis ◽  
J. Shaw ◽  
B.J. Grenon
Keyword(s):  
Electron Beam ◽  
Oxygen Plasma ◽  
Plasma Etch ◽  
Oxygen Plasma Etch ◽  
Etch Rates ◽  
Organosilicon Polymers
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