Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities

2001 ◽  
Vol 19 (5) ◽  
pp. 2272-2281 ◽  
Author(s):  
W. Lee Perry ◽  
Karla Waters ◽  
Marcos Barela ◽  
Harold M. Anderson
Keyword(s):  
Low Pressure ◽  
High Density ◽  
Plasma Parameters ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Etch Rates

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

GaN Etching in BCl3/Cl2 Plasmas

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
High Plasma ◽  
High Density ◽  
Chamber Pressure ◽  
Plasma Etch ◽  
Source Power ◽  
Inductively Coupled ◽  
High Volatility ◽  
Gan Etching

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.

scholarly journals Selective Etching Of Wide Bandgap Nitrides

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. Han ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
High Density ◽  
Chamber Pressure ◽  
Rf Power ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Patterning Technique ◽  
Etch Rates ◽  
Coupled Plasmas

AbstractHigh-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are 2 to 4 orders of magnitude higher than more conventional reactive ion etch (RIE) systems. GaN etch rates exceeding 0.68 μm/min have been reported in Cl2/H2/Ar inductively coupled plasmas (ICP) at -280 V dc-bias. Under these conditions, the etch mechanism is dominated by ion bombardment energies which can induce damage and minimize etch selectivity. High selectivity etch processes are often necessary for heterostructure devices which are becoming more prominent as growth techniques improve. In this study, we will report high-density ICP etch rates and selectivities for GaN, AIN, and InN as a function of cathode power, ICP-source power, and chamber pressure. GaN:AIN selectivities > 8:1 were observed in a Cl2/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at ∼ 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

Experimental and simulation investigation of electrical and plasma parameters in a low pressure inductively coupled argon plasma

2017 ◽  
Vol 19 (11) ◽  
pp. 115402 ◽  
Author(s):  
Jian YANG ◽  
Angjian WU ◽  
Xiaodong LI ◽  
Yang LIU ◽  
Fengsen ZHU ◽  
...  
Keyword(s):  
Argon Plasma ◽  
Low Pressure ◽  
Plasma Parameters ◽  
Inductively Coupled
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