Comparison of ICl and IBr for Dry Etching of III-Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Microwave Power ◽  
Etch Rate ◽  
Product Formation ◽  
Bond Breaking ◽  
Weakly Bound ◽  
Preferential Loss ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 µm/min. These rates are much higher than with Cl2/Ar, CH4/H2/Ar or other plasma chemistries. InN etch rates up to 1.15 µm/min and 0.7 µm/min for In0.5Ga0.5N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 µm/min for GaN to 0.3 µm/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of IC1 and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over A1N with IC1 and IBr are still lower than with Cl2- only.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

Cl2-Based ECR Etching of InGaP, AlInP and AIGaP

1996 ◽  
Vol 421 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
S. J. Pearton ◽  
C. Santana ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Microwave Power ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
High Rate ◽  
Chamber Pressure ◽  
Rf Power ◽  
Polymer Addition ◽  
Ar Plasma ◽  
Etch Rates ◽  
Etched Surface

AbstractHigh microwave power (1000W) Electron Cyclotron Resonance (ECR) Cl2/Ar plasma produce etch rates for In0.5Ga0.5P, Al0.5In0.5P and Al0.5Ga0.5P of ˜1um/min. at low pressure (1.5mTorr), moderate rf power levels (150W) and room temperature. Addition of Cl2 into Ar makes much smoother etched surface morphology as well as increasing the etch rate. All parameters, including microwave power, chamber pressure and rf power increase the etch rate of these alloys. Especially, there is at least a minimum rf power in order to get much higher etch rate with increasing microwave power. AlGaP in Cl2/Ar discharges has lower etch rates than InGaP or AlInP, which is similar to the results based on CH4/H2/Ar plasma chemistries. The Cl2/Ar chemistry enables smooth, high-rate etching without the need for polymer addition and thus simplifies the processing.

High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas

1995 ◽  
Vol 380 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
R. J. Shul ◽  
S. P. Kilcoyne ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Microwave Power ◽  
Etch Rate ◽  
Surface Composition ◽  
Plasma Chemistry ◽  
High Rate ◽  
Rf Power ◽  
Plasma Parameters ◽  
Wide Range ◽  
Etch Rates

ABSTRACTEtch rates for binary nitrides in ECR Cl2/CH4/H2/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125 °C and then increase to a maximum of 2340 Å-min−1 at 170 °C. The AIN etch rate decreases throughout the temperature range studied with a maximum of 960 Å-min−1 at 30 °C. When CH4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III–V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

1992 ◽  
Vol 96 (7) ◽  
pp. 3029-3033 ◽  
Author(s):  
Akitomo Tachibana ◽  
Yuzuru Kurosaki ◽  
Hiroyuki Fueno ◽  
Toshiaki Sera ◽  
Tokio Yamabe
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Bond Formation

scholarly journals Simulation of Proton Beam Effects in Thin Insulating Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ljubinko Timotijevic ◽  
Irfan Fetahovic ◽  
Djordje Lazarevic ◽  
Milos Vujisic
Keyword(s):  
Monte Carlo ◽  
Silicon Nitride ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Monte Carlo Simulations ◽  
Proton Energy ◽  
Transport Parameters ◽  
Insulating Layer ◽  
Insulating Films ◽  
Ultrathin Layers

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

scholarly journals Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides

2008 ◽  
Vol 16 (17) ◽  
pp. 12987 ◽  
Author(s):  
Kazuhiro Ikeda ◽  
Robert E. Saperstein ◽  
Nikola Alic ◽  
Yeshaiahu Fainman
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Nonlinear Properties
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