Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

1988 ◽  
Vol 135 (1) ◽  
pp. 268-269 ◽  
Author(s):  
T. H. Fedynyshyn ◽  
G. W. Grynkewich ◽  
R. H. Dumas
Keyword(s):  
Etch Rate ◽  
Plasma Etch ◽  
Etch Rates

Plasma Etch Rates of Porous Silica Low-kFilms with Different Dielectric Constants

2006 ◽  
Vol 45 (11) ◽  
pp. 8873-8875 ◽  
Author(s):  
Tetsuo Ono ◽  
Hideki Takahashi ◽  
Keizo Kinoshita ◽  
Nobutoshi Fujii ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Porous Silica ◽  
Dielectric Constants ◽  
Plasma Etch ◽  
Etch Rates

scholarly journals A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Seon-Geun Oh ◽  
Kwang-Su Park ◽  
Young-Jun Lee ◽  
Jae-Hong Jeon ◽  
Hee-Hwan Choe ◽  
...  
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Optical Emission ◽  
Process Conditions ◽  
Square Root ◽  
Dual Frequency ◽  
Capacitively Coupled ◽  
Atomic Fluorine ◽  
Gas Flow Ratio ◽  
Etch Rates

The characteristics of the dry etching ofSiNx:H thin films for display devices using SF6/O2and NF3/O2were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For theSiNx:H film, the etch rates obtained using NF3/O2were higher than those obtained using SF6/O2under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltagesVHandVL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine(I(F))and the square root of the voltages(Vh+Vl)on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions

1990 ◽  
Vol 203 ◽  
Author(s):  
Kyung W. Paik ◽  
Richard J. Saia ◽  
John J. Chera
Keyword(s):  
Etch Rate ◽  
Plasma Modification ◽  
Surface Chemical ◽  
Ion Sputtering ◽  
Plasma Ions ◽  
Surface Chemical Composition ◽  
Atomic Fluorine ◽  
Oxygen Gas ◽  
Compositional Changes ◽  
Etch Rates

ABSTRACTThe etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not produce the surface SiO2, because of its faster Si and SiO2 etch rates. Ar ion sputtering following the plasma modification, restored the surface chemical composition to a state similar to the initial BCB surface.

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

Comparison of ICl and IBr for Dry Etching of III-Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Microwave Power ◽  
Etch Rate ◽  
Product Formation ◽  
Bond Breaking ◽  
Weakly Bound ◽  
Preferential Loss ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 µm/min. These rates are much higher than with Cl2/Ar, CH4/H2/Ar or other plasma chemistries. InN etch rates up to 1.15 µm/min and 0.7 µm/min for In0.5Ga0.5N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 µm/min for GaN to 0.3 µm/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of IC1 and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over A1N with IC1 and IBr are still lower than with Cl2- only.

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