Magnetron ion etching with CF4 based plasmas: Effects of magnetic field on plasma chemistry

1989 ◽  
Vol 7 (3) ◽  
pp. 542 ◽  
Author(s):  
A. A. Bright
Keyword(s):  
Magnetic Field ◽  
Plasma Chemistry ◽  
Ion Etching

Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

1984 ◽  
Vol 38 ◽  
Author(s):  
Ch. Steinbruchel ◽  
H. W. Lehmann ◽  
K. Frick
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Ion Density ◽  
Ion Beam Etching ◽  
Plasma Species ◽  
Parallel Plate Reactor ◽  
Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

Reactive ion etching of Al alloy and silicon dioxide films in a rotating magnetic field

1994 ◽  
Author(s):  
Masafumi Tanabe ◽  
Akio Matsuda ◽  
Takeshi Sunada ◽  
Taro Nomura ◽  
Hideki Fujimoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Silicon Dioxide ◽  
Reactive Ion Etching ◽  
Rotating Magnetic Field ◽  
Al Alloy ◽  
Ion Etching ◽  
Silicon Dioxide Films

Magnetic field-assisted finishing for micropore X-ray focusing mirrors fabricated by deep reactive ion etching

CIRP Annals ◽  
2010 ◽  
Vol 59 (1) ◽  
pp. 351-354 ◽  
Author(s):  
H. Yamaguchi ◽  
R.E. Riveros ◽  
I. Mitsuishi ◽  
U. Takagi ◽  
Y. Ezoe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
X Ray

Silicon CMOS BEOL Compatible Optical Waveguide Micro-mirrors

2002 ◽  
Vol 744 ◽  
Author(s):  
Shom Ponoth ◽  
Navnit Agarwal ◽  
Peter Persans ◽  
Joel Plawsky
Keyword(s):  
Refractive Index ◽  
Optical Waveguides ◽  
Silicon Oxide ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Planar Waveguides ◽  
Ion Etching ◽  
Polymer Waveguide ◽  
Sidewall Angle ◽  
On Chip

ABSTRACTOptical waveguides are being explored for on-chip purposes to overcome the speed limitations of electrical interconnects. Passive optical components like waveguides and vertical outcouplers are important components in such schemes. In this study we fabricate planar waveguides with integrated vertical micro-mirrors using standard Back End of the Line silicon (BEOL) CMOS based processes. Around 1.6 μm of a hybrid alkoxy siloxane polymer with a refractive index of ∼ 1.50 at the intended wavelength of 830 nm is used as the core and plasma deposited silicon oxide with a refractive index of ∼ 1.46 is used as the cladding. The angular face in the polymer waveguide that would function as the mirror surface was fabricated by a pattern transfer method which involves transferring the angle in a template to the waveguide using anisotropic reactive ion etching. The sidewall angle realized in a positive resist on patterning was used as the angle template. Exposure and development conditions were adjusted for Shipley® S1813 photoresist to generate a sidewall angle of ∼ 65°. The anisotropic Reactive Ion Etching (RIE) was done using a CF4/O2 plasma chemistry. A gas composition of 50/50 CF4/O2 was chosen in order to minimize the etch related roughness of the polymer and the photoresist. The metallization of the mirror faces was done using a self-aligned maskless technique which ensures metal deposition only on the angular face and also eliminates a lithography step.

Magnetic Ceramic Films from a Metallopolymer Resist Using Reactive Ion Etching in a Secondary Magnetic Field

2004 ◽  
Vol 16 (4) ◽  
pp. 291-296 ◽  
Author(s):  
S. B. Clendenning ◽  
S. Han ◽  
N. Coombs ◽  
C. Paquet ◽  
M. S. Rayat ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ceramic Films
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