On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

1986 ◽  
Vol 4 (4) ◽  
pp. 931 ◽  
Author(s):  
N. Newman
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME

1994 ◽  
Vol 01 (04) ◽  
pp. 429-433 ◽  
Author(s):  
MARTINA HEINEMANN
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Barriers ◽  
High Coverage ◽  
Large Group ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces ◽  
First Time

The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning
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