scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

2010 ◽  
Vol 96 (5) ◽  
pp. 052514 ◽  
Author(s):  
Donkoun Lee ◽  
Shyam Raghunathan ◽  
Robert J. Wilson ◽  
Dmitri E. Nikonov ◽  
Krishna Saraswat ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Fermi Level Pinning

Temperature dependent Schottky barrier height and Fermi level pinning on Au/HBC/GaAs diodes

2008 ◽  
Vol 92 (15) ◽  
pp. 153309 ◽  
Author(s):  
Soner Özcan ◽  
Jürgen Smoliner ◽  
Thomas Dienel ◽  
Torsten Fritz
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Fermi Level Pinning

SCHOTTKY BARRIER HEIGHT AND ATOMIC STRUCTURE OF EPITAXIAL Pb/Si(111) INTERFACES

1991 ◽  
Vol 05 (06) ◽  
pp. 397-405
Author(s):  
D.R. HESLINGA ◽  
T.M. KLAPWIJK ◽  
H.H. WEITERING ◽  
T. HIBMA
Keyword(s):  
Electrical Properties ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Atomic Structure ◽  
Schottky Barrier Height ◽  
Interface State ◽  
The Other ◽  
Fermi Level Pinning ◽  
Structural And Electrical Properties

We review experiments on epitaxial Pb/Si (111) interfaces. Emphasis is laid on the interplay between structural and electrical properties, in particular the relation of the Schottky barrier height (SBH) with the structure of the first monoatomic Pb adlayer. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si (111)(7×7)- Pb structure, has a SBH of 0.70 eV. The other, a Si (111)(√3×√3) R 30°- Pb structure has a SBH of 0.93 eV. Angle resolved photoemission results favor an interpretation in terms of Fermi level pinning by a discrete locali::ed interface state.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

scholarly journals Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Yi-Hsun Chen ◽  
Chih-Yi Cheng ◽  
Shao-Yu Chen ◽  
Jan Sebastian Dominic Rodriguez ◽  
Han-Ting Liao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Surface Oxidation ◽  
Tunneling Barrier ◽  
Experimental Realization ◽  
Gap States

AbstractIn two-dimensional (2D)-semiconductor-based field-effect transistors and optoelectronic devices, metal–semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal–2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin-surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide–2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm2/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized-monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

A Proposed Regrowth Mechanism for the Enhancement of Schottky Barrier Height to N-GAAS

1994 ◽  
Vol 337 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Gaas Layer ◽  
Dark Field ◽  
Schottky Barriers ◽  
Semiconductor Interface ◽  
Al Content ◽  
Current Voltage ◽  
High Al Content

ABSTRACTA systematic study of the enhancement of Schottky barriers to n-GaAs diodes has been carried out using the Ni-Al binary system. The diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/n-GaAs, have been realized by sputter deposition at a base pressure ∼2xl0-7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs contacts. The enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. The formation of this (Al,Ga)As layer was explained in terms of a regrowth mechanism. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer is believed to react with the Ni-Al layer to form the (Al,Ga)As layer when subjected to a high temperature annealing. A (200) dark field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase.

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