Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

SHG(Second Harmonic Generation) in Reflection from GaAs Surfaces during Sulfur Passivation and Photochemical Washing Processes

1992 ◽  
Vol 259 ◽  
Author(s):  
Chikashi Yamada ◽  
Takahiro Kimura ◽  
Peter Fuqua
Keyword(s):  
Second Harmonic Generation ◽  
Fermi Level ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Band Bending ◽  
Remarkable Similarity ◽  
Fermi Level Pinning ◽  
Sulfur Passivation ◽  
Intensity Changes ◽  
Pl Intensity

ABSTRACTA passivation processes using Na2S and photochemical washing of GaAs (100) surfaces was studied in real time by a second-harmonic generation (SHG) technique. The intensities of surface-specific SHG signals were compared with those of photoluminescence (PL) signals. We found a remarkable similarity between the SHG and PL intensity changes during these processes. A band-bending model due to Fermi-level pinning at the surface has been applied in order to account for both the SHG and the PL intensity changes.

scholarly journals Инфракрасное фотоотражение полупроводниковых материалов A-=SUP=-3-=/SUP=-B-=SUP=-5-=/SUP=- ( О б з о р )

2021 ◽  
Vol 63 (8) ◽  
pp. 991
Author(s):  
О.С. Комков
Keyword(s):  
Fermi Level ◽  
Decisive Role ◽  
Infrared Range ◽  
Orbit Splitting ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
Surface And Interface ◽  
Spin Orbit Splitting ◽  
Wide Wavelength Range ◽  
Excitonic Effects

Photoreflectance is a contactless type of modulation optical spectroscopy. It is used to study the band structure features of monocrystalline semiconductors, their doping level, the composition of alloys, as well as surface and interface band bending. Using high-quality GaAs as an example, the possibilities of describing the photoreflectance lineshape by one-electron and exciton models are demonstrated. The spectra of ultrapure samples of this material exhibit an oscillating structure well described by excitonic effects. For III-V alloys, a review of photoreflectance results concerning the effect of composition and temperature on the band gap and spin-orbit splitting is carried out. Determination of the position of the Fermi level on the surface (Fermi level pinning) for III-V crystals is considered. The currently developing technique for measuring photoreflectance in the mid-infrared range (photomodulation Fourier transform infrared spectroscopy) is described in detail. It is shown that phase correction plays a decisive role in such measurements. Original results demonstrate the capabilities of this method in a wide wavelength range.

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

1989 ◽  
Vol 54 (6) ◽  
pp. 555-557 ◽  
Author(s):  
E. Yablonovitch ◽  
B. J. Skromme ◽  
R. Bhat ◽  
J. P. Harbison ◽  
T. J. Gmitter
Keyword(s):  
Fermi Level ◽  
Fixed Charge ◽  
Band Bending ◽  
Fermi Level Pinning

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

2014 ◽  
Vol 104 (13) ◽  
pp. 132103 ◽  
Author(s):  
Makoto Arita ◽  
Kazuhisa Torigoe ◽  
Takashi Yamauchi ◽  
Takashi Nagaoka ◽  
Toru Aiso ◽  
...  
Keyword(s):  
Fermi Level ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Fermi Level Pinning

Evidence of band bending and surface Fermi level pinning in graphite oxide

Carbon ◽  
2013 ◽  
Vol 57 ◽  
pp. 227-231 ◽  
Author(s):  
Hae Kyung Jeong ◽  
Lingmei Hong ◽  
Xin Zhang ◽  
Eduardo Vega ◽  
P.A. Dowben
Keyword(s):  
Fermi Level ◽  
Graphite Oxide ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

scholarly journals Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study

2018 ◽  
Vol 20 (18) ◽  
pp. 12939-12947 ◽  
Author(s):  
Andrey A. Kistanov ◽  
Yongqing Cai ◽  
Kun Zhou ◽  
Sergey V. Dmitriev ◽  
Yong-Wei Zhang
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Electronic Properties ◽  
Surface Functionalization ◽  
First Principles ◽  
Molecular Adsorption ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
First Principles Study ◽  
P Type

A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.

CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoelectron Spectroscopy

2014 ◽  
Vol 1638 ◽  
Author(s):  
Richard Haight ◽  
Aaron Barkhouse ◽  
Wei Wang ◽  
Yu Luo ◽  
Xiaoyan Shao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
Solution Phase ◽  
Buffer Layers ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Band Bending ◽  
Pump Probe ◽  
Fermi Level Pinning ◽  
Band Alignments

ABSTRACTThe heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4 (CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

Fermi Level Pinning Controls Band Bending and Photochemical Charge Separation in Particles of n-SrTiO3, n-SrTiO3:Al, and n-GaAs:Te

2020 ◽  
Vol 124 (34) ◽  
pp. 18426-18435 ◽  
Author(s):  
Rachel M. Doughty ◽  
Brett Hodges ◽  
Julius Dominguez ◽  
Ruirui Han ◽  
Zeqiong Zhao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Separation ◽  
Band Bending ◽  
Fermi Level Pinning

UHV Model Experiments of Electrochemical Etching of GaAs BY H2O/Br2

1996 ◽  
Vol 451 ◽  
Author(s):  
O. Henrion ◽  
A. Klein ◽  
C. Ettenkofer ◽  
W. Jaegermann
Keyword(s):  
Fermi Level ◽  
Low Temperatures ◽  
Cleavage Plane ◽  
Electrochemical Etching ◽  
Band Bending ◽  
Model Experiments ◽  
Fermi Level Pinning ◽  
Surface Etching

ABSTRACTTo investigate the initial steps of GaAs etching Br2 and H2O were (co)adsorbed onto the (110) cleavage plane at 100 K and the interaction investigated by SXPS and LEED. H2O is dissociatively adsorbed at low temperatures and leads to Fermi level pinning close to midgap. Br2 leads, depending on coverage, to the formation of bromides of different stoichiometries. During annealing to 290 K the bromides mostly evaporate from the surface (etching). Br2 and H2O coadsorption leads to Ga-oxide remaining on the surface. For the reactive interfaces band bending is not observed. The results of the adsorption experiments are compared to electrochemically prepared surfaces.

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