scholarly journals Fermi level pinning by integer charge transfer at electrode-organic semiconductor interfaces

2011 ◽  
Vol 98 (11) ◽  
pp. 113303 ◽  
Author(s):  
Menno Bokdam ◽  
Deniz Çakır ◽  
Geert Brocks
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Organic Semiconductor ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

scholarly journals Fermi level pinned molecular donor/acceptor junctions: reduction of induced carrier density by interfacial charge transfer complexes

2020 ◽  
Vol 8 (43) ◽  
pp. 15199-15207
Author(s):  
Paul Beyer ◽  
Eduard Meister ◽  
Timo Florian ◽  
Alexander Generalov ◽  
Wolfgang Brütting ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Carrier Density ◽  
Charge Transfer Complex ◽  
Charge Transfer Complexes ◽  
Interfacial Charge Transfer ◽  
Fermi Level Pinning ◽  
Donor Acceptor ◽  
Interfacial Charge

Charge transfer complex (CPX) formation at a donor–acceptor interface reduces the amount of Fermi-level pinning induced interfacial charge transfer.

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Fermi level positioning in organic semiconductor phase mixed composites: The internal interface charge transfer doping model

2012 ◽  
Vol 13 (8) ◽  
pp. 1356-1364 ◽  
Author(s):  
Thomas Mayer ◽  
Corinna Hein ◽  
Eric Mankel ◽  
Wolfram Jaegermann ◽  
Mathis M. Müller ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Organic Semiconductor ◽  
Internal Interface ◽  
Interface Charge ◽  
Interface Charge Transfer

Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces

2014 ◽  
Vol 115 (4) ◽  
pp. 043529 ◽  
Author(s):  
Stanisław Krukowski ◽  
Paweł Kempisty ◽  
Paweł Strak ◽  
Konrad Sakowski
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Fermi Level Pinning
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