Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si

1985 ◽  
Vol 3 (1) ◽  
pp. 67 ◽  
Author(s):  
Yukinori Ochiai
Keyword(s):  
Ion Beam ◽  
Angle Dependence ◽  
Irradiation Angle

Growth of Cu-Oxide Protrusion by Ar Ion Irradiation

2007 ◽  
Vol 558-559 ◽  
pp. 1359-1362 ◽  
Author(s):  
Hiroyuki Tanaka ◽  
Shunichiro Tanaka
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Residual Oxygen ◽  
Irradiation Angle ◽  
Oxygen Atoms

Cu2O conical micron-scale protrusions have been grown on a preoxidized Cu surface by the Ar ion beam irradiation at 9 kV for 5-20 min in the low vacuum. This Ar ion irradiation is based on the ‘Transcription Method’ which has been originated by B.-S. Xu and S.-I. Tanaka in 1996 to form nanoparticles. Ar ion irradiation induced needle-like nanostructures composed of Cu2O and CuO which were randomly nucleated on Cu surface by the oxidation at 623 K for 10 min in the air. The obtained Cu2O conical protrusions have a controllable length of up to 14.6 μm with diameter in the range of 0.8 μm by changing the Ar ion irradiation angle to the surface. The mechanism of the formation of the conical protrusions is proposed that Cu atoms on the Cu surface activated and sputtered by the Ar ion irradiation diffuse on the surface of needle-like oxide as nuclei along the Ar ion track and react with residual oxygen atoms to grow the conical Cu2O protrusions.

Ion Incident Angle Dependence of Ridge Shapes Formed on [111] Oriented Gd3Ga5O12by Ion Beam Etching

1992 ◽  
Vol 31 (Part 2, No. 5A) ◽  
pp. L591-L593 ◽  
Author(s):  
Yujiro Katoh ◽  
Naoto Sugimoto ◽  
Akiyuki Tate ◽  
Atsushi Shibukawa
Keyword(s):  
Incident Angle ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Angle Dependence

Tunneling and anisotropic-tunneling magnetoresistance in iron nanoconstrictions fabricated by focused-ion-beam

2009 ◽  
Vol 1181 ◽  
Author(s):  
Amalio Fernandez-Pacheco ◽  
Jose M De Teresa ◽  
Rosa Cordoba ◽  
Ricardo Ibarra
Keyword(s):  
Low Temperatures ◽  
Conduction Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Fabrication Process ◽  
Tunneling Magnetoresistance ◽  
Metallic Contact ◽  
Angle Dependence ◽  
Conductance Quantum

AbstractWe report the magnetoresistance (MR) measurements in a nanoconstriction fabricated by focused-ion-beam (FIB) in the tunneling regime of conductance. The resistance of the contact was controlled during the fabrication process, being stable in the metallic regime, near the conductance quantum, and under high vacuum conditions. The metallic contact was deteriorated when exposed to atmosphere, resulting in a conduction mechanism by tunneling. The TMR was found to be of 3% at 24 K. The anisotropic tunneling magnetoresistance (TAMR) was around 2% for low temperatures, with a field angle dependence more abrupt than in bulk Fe. This preliminary result is promising for the application of this technique to fabricate stable ferromagnetic constrictions near the atomic regime of conductance, where high MR values are expected.

Influence of irradiation angle on coating quality and wear resistance of ta-CNx coating by nitrogen ion beam-assisted FCVA method

2020 ◽  
Vol 2020 (0) ◽  
pp. S11513
Author(s):  
Kodai HIRATA ◽  
Noritugu UMEHARA ◽  
Takayuki TOKOROYAMA ◽  
Motoyuki MURASHIMA ◽  
Wooyang LEE
Keyword(s):  
Wear Resistance ◽  
Ion Beam ◽  
Coating Quality ◽  
Nitrogen Ion ◽  
Irradiation Angle

bombardment angle dependence of reactive ion-beam etching of GaAs with CH4/H2

Vacuum ◽  
1994 ◽  
Vol 45 (10-11) ◽  
pp. 1113-1114 ◽  
Author(s):  
JM Villalvilla ◽  
C Santos ◽  
JA Vallés-Abarca
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Angle Dependence ◽  
Reactive Ion Beam Etching
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