Incidence Angle Dependence of the Silicon Near-Surface Contamination Caused by CF4 Reactive Ion Beam Etching

1990 ◽  
Vol 190 ◽  
Author(s):  
C. Lejeune ◽  
J.P. Grandchamp ◽  
J.P. Gilles ◽  
E. Collard
Keyword(s):  
Incidence Angle ◽  
Ion Beam ◽  
Surface Contamination ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Angle Dependence ◽  
Reactive Ion Beam Etching

bombardment angle dependence of reactive ion-beam etching of GaAs with CH4/H2

Vacuum ◽  
1994 ◽  
Vol 45 (10-11) ◽  
pp. 1113-1114 ◽  
Author(s):  
JM Villalvilla ◽  
C Santos ◽  
JA Vallés-Abarca
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Angle Dependence ◽  
Reactive Ion Beam Etching

Carbonaceous overlayer and near-surface damage after pure CF4 reactive ion beam etching of silicon: Exposure dose effects

1989 ◽  
Vol 36 (1-4) ◽  
pp. 350-361 ◽  
Author(s):  
C. Lejeune ◽  
J.P. Grandchamp ◽  
J.P. Gilles ◽  
E. Collard ◽  
P. Scheiblin
Keyword(s):  
Ion Beam ◽  
Surface Damage ◽  
Exposure Dose ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Dose Effects ◽  
Reactive Ion Beam Etching

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

Vapor deposition polymerization and reactive ion beam etching of poly(p-xylylene) films for waveguide applications

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching
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