Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

1999 ◽  
Vol 17 (6) ◽  
pp. 3265-3271 ◽  
Author(s):  
Sairam Agraharam ◽  
Dennis W. Hess ◽  
Paul A. Kohl ◽  
Sue A. Bidstrup Allen
Keyword(s):  
Plasma Chemistry ◽  
Film Deposition ◽  
Fluorocarbon Film

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

scholarly journals Various evolution trends of sample thickness in fluorocarbon film deposition on SiO2

2022 ◽  
Vol 40 (1) ◽  
pp. 013001
Author(s):  
Youngseok Lee ◽  
Inho Seong ◽  
Jangjae Lee ◽  
Sangho Lee ◽  
Chulhee Cho ◽  
...  
Keyword(s):  
Film Deposition ◽  
Sample Thickness ◽  
Fluorocarbon Film

Spatial Resolution of Small Particles in Silane Discharge

1984 ◽  
Vol 38 ◽  
Author(s):  
K. G. Spears ◽  
R. M. Roth
Keyword(s):  
Laser Light ◽  
Plasma Chemistry ◽  
Spatial Location ◽  
Film Deposition ◽  
Size Distributions ◽  
Small Particles ◽  
Capacitively Coupled ◽  
Multi Wavelength ◽  
Rf Glow Discharge ◽  
Deposition Processes

AbstractA capacitively coupled, rf glow discharge of silane in argon was studied with laser light scattering to determine the spatial concentration of small particles. Multi-wavelength scattering profiles have been obtained and are being analyzed to obtain size distributions as a function of spatial location. Very sharply defined particle zones can be found under some plasma conditions that are spatially related to the silicon atom profiles. We will report our results and attempt to qualitatively describe how these zones relate to plasma chemistry and film deposition processes.

Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition

2017 ◽  
Vol 35 (1) ◽  
pp. 01A103 ◽  
Author(s):  
Takayoshi Tsutsumi ◽  
Hiroki Kondo ◽  
Masaru Hori ◽  
Masaru Zaitsu ◽  
Akiko Kobayashi ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Film Deposition ◽  
Atomic Layer Etching ◽  
O2 Plasma ◽  
Fluorocarbon Film
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