Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3

1994 ◽  
Vol 12 (2) ◽  
pp. 323-332 ◽  
Author(s):  
G. S. Oehrlein ◽  
Y. Zhang ◽  
D. Vender ◽  
M. Haverlag
Keyword(s):  
Film Deposition ◽  
High Density ◽  
Fluorocarbon Film

Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

1999 ◽  
Vol 17 (6) ◽  
pp. 3265-3271 ◽  
Author(s):  
Sairam Agraharam ◽  
Dennis W. Hess ◽  
Paul A. Kohl ◽  
Sue A. Bidstrup Allen
Keyword(s):  
Plasma Chemistry ◽  
Film Deposition ◽  
Fluorocarbon Film

scholarly journals Various evolution trends of sample thickness in fluorocarbon film deposition on SiO2

2022 ◽  
Vol 40 (1) ◽  
pp. 013001
Author(s):  
Youngseok Lee ◽  
Inho Seong ◽  
Jangjae Lee ◽  
Sangho Lee ◽  
Chulhee Cho ◽  
...  
Keyword(s):  
Film Deposition ◽  
Sample Thickness ◽  
Fluorocarbon Film

High-Density Plasma Etching of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
T. E. F. M. Standaert ◽  
P. J. Matsuo ◽  
S. D. Allen ◽  
G. S. Oehrlein ◽  
T. J. Dalton ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Density ◽  
Low Dielectric Constant ◽  
Hydrogen Silsesquioxane ◽  
Copper Surfaces ◽  
Low Dielectric ◽  
Oxygen Contamination ◽  
Low Dielectric Constant Materials ◽  
Fluorocarbon Film ◽  
Density Plasma

ABSTRACTThe patterning of several novel low dielectric constant (K) materials has been studied in a high-density plasma (HDP) tool. Recent results obtained on oxide-like materials, such as fluorinated oxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed. These materials can be successfully patterned using a fluorocarbon etching chemistry. The etching is in this case controlled by a thin fluorocarbon film at the surface. The patterning of polymer dielectrics can be performed in an oxygen etching chemistry. As an example, the patterning of Parylene-N in an oxygen chemistry is discussed. In this case, the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process. After the dielectric etch, either in a fluorocarbon or oxygen based chemistry, fluorocarbons and oxygen contamination remain at the exposed metal surfaces. We recently demonstrated how a plasma treatment following the dielectric etch reduces these contaminants. The results of this treatment on copper surfaces and the resulting modification to the dielectric are reviewed.

Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition

2017 ◽  
Vol 35 (1) ◽  
pp. 01A103 ◽  
Author(s):  
Takayoshi Tsutsumi ◽  
Hiroki Kondo ◽  
Masaru Hori ◽  
Masaru Zaitsu ◽  
Akiko Kobayashi ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Film Deposition ◽  
Atomic Layer Etching ◽  
O2 Plasma ◽  
Fluorocarbon Film
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