Spatial Resolution of Small Particles in Silane Discharge

1984 ◽  
Vol 38 ◽  
Author(s):  
K. G. Spears ◽  
R. M. Roth
Keyword(s):  
Laser Light ◽  
Plasma Chemistry ◽  
Spatial Location ◽  
Film Deposition ◽  
Size Distributions ◽  
Small Particles ◽  
Capacitively Coupled ◽  
Multi Wavelength ◽  
Rf Glow Discharge ◽  
Deposition Processes

AbstractA capacitively coupled, rf glow discharge of silane in argon was studied with laser light scattering to determine the spatial concentration of small particles. Multi-wavelength scattering profiles have been obtained and are being analyzed to obtain size distributions as a function of spatial location. Very sharply defined particle zones can be found under some plasma conditions that are spatially related to the silicon atom profiles. We will report our results and attempt to qualitatively describe how these zones relate to plasma chemistry and film deposition processes.

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane

1984 ◽  
Vol 38 ◽  
Author(s):  
R. M. Roth ◽  
K. G. Spears ◽  
G. Wong
Keyword(s):  
Plasma Chemistry ◽  
Chamber Pressure ◽  
Capacitively Coupled ◽  
Sheath Region ◽  
Rf Discharges ◽  
Sheath Formation ◽  
Rf Glow Discharge ◽  
Dc Bias ◽  
Anode Sheath ◽  
State Concentration

AbstractA capacitively coupled rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laserinduced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. The dc bias voltage, silane mole fractions, flow rates, and chamber pressure were all varied to establish the sensitivity of the silane profiles. The existing theory of sheath formation is used to qualitatively understand the existence of sharp spatial boundaries and the sensitivity of the anode sheath region to plasma chemistry.

Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

1999 ◽  
Vol 17 (6) ◽  
pp. 3265-3271 ◽  
Author(s):  
Sairam Agraharam ◽  
Dennis W. Hess ◽  
Paul A. Kohl ◽  
Sue A. Bidstrup Allen
Keyword(s):  
Plasma Chemistry ◽  
Film Deposition ◽  
Fluorocarbon Film

Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films

1995 ◽  
Vol 10 (11) ◽  
pp. 2736-2741 ◽  
Author(s):  
Hiroki Takahashi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Hiroshi Takai
Keyword(s):  
Compressive Stress ◽  
Volume Expansion ◽  
Bond Angle ◽  
Film Deposition ◽  
The Other ◽  
Structural Disorders ◽  
First Results ◽  
Amorphous Si ◽  
Deposition Processes ◽  
Deposition Conditions

The relation between stresses of sputtered a-Si: H films and the film deposition conditions are investigated. The film stresses change from a large compressive stress of 1000 MPa to an almost stress-free one. They arise from distortions of the Si network via the following two mechanisms. The first results from the inclusion of the Ar-sputtering gas into the films, which provides volume expansion of the film network. The other is due to structural disorders, such as a deviation of the Si bond angle which is generated during the deposition processes. Moreover, it is found that Si–H terminations in the films contribute to reducing the film stresses because the Si–H termination breaks and relaxes the Si network. These effects can be realized as long as the Si–H terminations are homogeneously distributed in the films.

Deposition of diamond-like carbon

1993 ◽  
Vol 342 (1664) ◽  
pp. 277-286 ◽  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Like Carbon ◽  
Hydrogenated Amorphous Carbon ◽  
Sizeable Fraction ◽  
Deposition Processes ◽  
Hydrogenated Amorphous

Diamond-like carbon refers to forms of amorphous carbon and hydrogenated amorphous carbon containing a sizeable fraction of sp 3 bonding, which makes them mechanically hard, infrared transparent and chemically inert. This paper discusses the various thin film deposition processes used to form diamond-like carbon and the deposition mechanisms responsible for promoting the metastable sp 3 bonding.

Deposition of organosilicon coatings from trimethylsilyl acetate and oxygen gases in capacitively coupled RF glow discharge

2020 ◽  
Vol 149 ◽  
pp. 105927
Author(s):  
Štěpánka Kelarová ◽  
Vojtěch Homola ◽  
Monika Stupavká ◽  
Martin Čermák ◽  
Jiří Vohánka ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Capacitively Coupled ◽  
Rf Glow Discharge
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