Investigation of Reactive‐Ion‐Etching‐Related Fluorocarbon Film Deposition onto Silicon and a New Method for Surface Residue Removal

1986 ◽  
Vol 133 (5) ◽  
pp. 1002-1008 ◽  
Author(s):  
G. S. Oehrlein ◽  
J. G. Clabes ◽  
P. Spirito
Keyword(s):  
Reactive Ion Etching ◽  
Film Deposition ◽  
New Method ◽  
Surface Residue ◽  
Ion Etching ◽  
Residue Removal ◽  
Fluorocarbon Film

TSV Resist and Residue Removal

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001596-001620
Author(s):  
Laura Mauer ◽  
John Taddei ◽  
Ramey Youssef ◽  
Kimberly Pollard ◽  
Allison Rector
Keyword(s):  
Reactive Ion Etching ◽  
3D Integration ◽  
Auger Analysis ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Spray Process ◽  
Residue Removal ◽  
One Step ◽  
Silicon Vias ◽  
Etch Residue

3D integration is the most active methodology for increasing device performance. The ability to create Through Silicon Vias (TSV) provides the shortest path for interconnections and will result in increased device speed and reduced package footprint. There are numerous technical papers and presentations on the etching and filling of these vias, however the process for cleaning is seldom mentioned. Historically, after reactive ion etching (RIE), cleaning is accomplished using an ashing process to remove any remaining photoresist, followed by dipping the wafer in a solution-based post etch residue remover. However, in the case of TSV formation, deep reactive ion etching (DRIE) is used to create the vias. A byproduct of this etching process is the formation of a fluorinated passivation layer, often referred to as a fluoropolymer. The fluoropolymer is not easily removed using traditional post etch residue removers, thus creating the opportunity for new and improved formulations and processes for its removal. This paper will describe a robust cleaning process for one step removal of both the photoresist and sidewall polymer residues from TSVs. A combination soak and high pressure spray process using Dynastrip™ AP7880™-C, coupled with a megasonic final rinse provides clean results for high aspect ratio vias. SEM, EDX and Auger analysis will illustrate the cleanliness levels achieved.

Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?

2006 ◽  
Vol 527-529 ◽  
pp. 419-422 ◽  
Author(s):  
Ze Hong Zhang ◽  
Amitesh Shrivastava ◽  
Tangali S. Sudarshan
Keyword(s):  
Basal Plane ◽  
Reactive Ion Etching ◽  
New Method ◽  
Ion Etching ◽  
Edge Dislocations ◽  
Koh Etching

Dislocations were tracked from 4H-SiC epilayer to the substrate by a new method based on combination of molten KOH etching and Reactive Ion Etching. It was found that basal plane dislocations (BPDs) with dislocation lines parallel (or approximately parallel) to the off-cut direction might propagate as BPDs into the epilayer, while those with dislocation lines forming large angles (>10º) with the off-cut direction will get converted to threading edge dislocations (TEDs). A model is proposed to explain the observations.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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