scholarly journals Potential of High-density Convergent Plasma Sputtering Device for Magnetic Film Deposition

2019 ◽  
Vol 17 (0) ◽  
pp. 27-31
Author(s):  
Taisei Motomura ◽  
Tatsuo Tabaru
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.


2018 ◽  
Vol 11 (9) ◽  
pp. 095101 ◽  
Author(s):  
Kenji Yamazaki ◽  
Yosuke Maehara ◽  
Ryo Kitajima ◽  
Yuta Fukami ◽  
Kazutoshi Gohara

2013 ◽  
Vol 250 (5) ◽  
pp. 957-967 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
Stuart P. Speakman ◽  
Caterina Ducati ◽  
...  

1969 ◽  
Vol 5 (3) ◽  
pp. 408-412 ◽  
Author(s):  
A. Pohm ◽  
Jish-Min Wang ◽  
F. Lee ◽  
W. Schnasse ◽  
T. Smay

2010 ◽  
Vol 1245 ◽  
Author(s):  
Haijun Jia ◽  
Michio Kondo

AbstractA multi-pressure microwave plasma source is developed and is applied for the fast deposition of crystalline silicon films. In this paper, the plasma source is diagnosed firstly. Electron density, electron temperature and discharge gas temperature of the plasmas generated in ambient air are studied using optical emission spectroscopy (OES) method. By using the high density microwave plasma source, depositions of crystalline silicon films from SiH4+He mixture at reduced pressure conditions are investigated systematically. After optimizing the film deposition conditions, highly crystallized Si films are deposited at a rate higher than 700 nm/s. We also find that the deposited films are fully crystallized and crystalline structure of the deposited film evolves along the film growth direction, i.e. large grains in surface region while small grains in the bottom region of the film. Based on the observed results, a possible mechanism, the annealing-assisted plasma-enhanced chemical vapor deposition, is proposed to describe the film growth process.


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