scholarly journals Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

2019 ◽  
Vol 126 (24) ◽  
pp. 243301 ◽  
Author(s):  
Vincent Renaud ◽  
Camille Petit-Etienne ◽  
Jean-Paul Barnes ◽  
Jérémie Bisserier ◽  
Olivier Joubert ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Remote Plasma ◽  
Cycling Process

scholarly journals Erratum: “Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching” [J. Appl. Phys. 126, 243301 (2019)]

2020 ◽  
Vol 127 (16) ◽  
pp. 169902
Author(s):  
Vincent Renaud ◽  
Camille Petit-Etienne ◽  
Jean-Paul Barnes ◽  
Jérémie Bisserier ◽  
Olivier Joubert ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Remote Plasma ◽  
Cycling Process

Optimizing remote plasma sources for selective etching

2016 ◽  
Author(s):  
Shuo Huang ◽  
Mark J. Kushner ◽  
Vladimir Volynets ◽  
Sangheon Lee ◽  
In-Cheol Song ◽  
...  
Keyword(s):  
Selective Etching ◽  
Remote Plasma ◽  
Plasma Sources

scholarly journals Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

2016 ◽  
Vol 113 (26) ◽  
pp. 7026-7034 ◽  
Author(s):  
Klaus Bartschat ◽  
Mark J. Kushner
Keyword(s):  
Low Temperature ◽  
Computational Methods ◽  
Plasma Etching ◽  
Recent Progress ◽  
High Technology ◽  
Remote Plasma ◽  
Electron Collisions ◽  
Benchmark Data ◽  
Diode Pumped ◽  
Low Temperature Plasmas

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society.

Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

2007 ◽  
Vol 84 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Ronald Hellriegel ◽  
Matthias Albert ◽  
Bernd Hintze ◽  
Hubert Winzig ◽  
J.W. Bartha
Keyword(s):  
Titanium Nitride ◽  
Plasma Etching ◽  
Remote Plasma
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