Secondary ion mass spectrometry analysis of aluminum films: Relative sensitivity factors and analytical considerations

1991 ◽  
Vol 9 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
F. A. Stevie ◽  
P. M. Kahora ◽  
G. W. Cochran
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Mass Spectrometry Analysis ◽  
Aluminum Films ◽  
Spectrometry Analysis ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

Calculation of Membrane Lipid Ratios Using Single-Pixel Time-of-Flight Secondary Ion Mass Spectrometry Analysis

2015 ◽  
Vol 87 (15) ◽  
pp. 7795-7802 ◽  
Author(s):  
Rainer Kassenböhmer ◽  
Felix Draude ◽  
Martin Körsgen ◽  
Andreas Pelster ◽  
Heinrich F. Arlinghaus
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Membrane Lipid ◽  
Mass Spectrometry Analysis ◽  
Spectrometry Analysis ◽  
Lipid Ratios ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Single Pixel

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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