Epitaxial CdTe films on GaAs/Si and GaAs substrates

1986 ◽  
Vol 4 (4) ◽  
pp. 2153-2157 ◽  
Author(s):  
R. C. Bean ◽  
K. R. Zanio ◽  
K. A. Hay ◽  
J. M. Wright ◽  
E. J. Saller ◽  
...  
Keyword(s):  
Gaas Substrates ◽  
Cdte Films

MeV ion channeling studies of (111) CdTe films on (111) GaAs substrates

1989 ◽  
Vol 66 (10) ◽  
pp. 5096-5098
Author(s):  
B. J. Wilkens ◽  
H. H. Farrell ◽  
K. Pollard ◽  
A. Erbil
Keyword(s):  
Ion Channeling ◽  
Gaas Substrates ◽  
Cdte Films

Auger electron spectroscopy study of pulsed-laser evaporated CdTe films on (100) GaAs

1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Pulsed Laser ◽  
Growth Surface ◽  
Spectroscopy Study ◽  
Gaas Substrates ◽  
Cdte Films

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.

Ion Channeling Studies of CdTe Films on GaAs

1988 ◽  
Vol 130 ◽  
Author(s):  
Barry Wilkens
Keyword(s):  
Thin Films ◽  
Lattice Mismatch ◽  
Ion Channeling ◽  
Model Based ◽  
Gaas Substrates ◽  
Cdte Films ◽  
Minimum Yield

AbstractThin films of [111] oriented CdTe have been MOCVD grown onto [111] GaAs substrates. When thicknesses exceed 1000Å the epitaxy is quite good (backscattering minimum yield of approximately 15%) in spite of a 14% lattice mismatch. A narrowing of the Cd angular scan suggests a displacement of some of the Cd atoms in the lattice. A model based on a Te vacancy is presented to describe the data.

Epitaxial Layer Misorientation in CdTe on GaAs‡

1990 ◽  
Vol 202 ◽  
Author(s):  
H. E. Inglefield ◽  
R. J. Matyi ◽  
R. Korenstein
Keyword(s):  
Epitaxial Layer ◽  
Gaas Substrate ◽  
Dislocation Model ◽  
Azimuthal Direction ◽  
X Ray Diffraction ◽  
Azimuthal Dependence ◽  
X Ray ◽  
Gaas Substrates ◽  
Cdte Films ◽  
Hot Wall Epitaxy

ABSTRACTX-ray diffraction has been used to characterize the relative misorientation of [001] and [111] CdTe layers grown by hot-wall epitaxy on GaAs substrates. The magnitude of the misorientation of the CdTe epitaxial layer relative to the GaAs substrate depends on the magnitude of the miscut of the substrate; in addition, the [111] oriented CdTe exhibited significantly larger misorientations than did the [001] CdTe films. The azimuthal direction of the tilt of the epitaxial layer depends strongly on the nominal crystallographic orientation of the film. The [111] CdTe exhibited an azimuthal dependence of the tilt that is approximately coincident with the miscut of the substrate, while the azimuthal direction of tilt in the [001] CdTe layers differed from the substrate miscut direction by as much as 116°. These observations of epitaxial layer misorientation are discussed in terms of a dislocation model for layer tilt and azimuthal rotation in lattice-mismatched epitaxial systems.

Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

1988 ◽  
Vol 3 (6) ◽  
pp. 1144-1150 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Full Width ◽  
Half Maximum ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Cdte Films ◽  
The Relationship

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

Effect of H2 heat-treatment of excitonic emission in MOCVD-grown CdTe films on (100) GaAs substrates

1990 ◽  
Vol 99 (1-4) ◽  
pp. 459-463 ◽  
Author(s):  
Chikara Onodera ◽  
Mitsuru Ekawa ◽  
Tsunemasa Taguchi
Keyword(s):  
Heat Treatment ◽  
Gaas Substrates ◽  
Excitonic Emission ◽  
Cdte Films

scholarly journals Observation of the Initial MBE Growth Process for the CdTe Films on (100)GaAs Substrates.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 321-324
Author(s):  
Tokuo YODO ◽  
Takeshi FURUSHOU ◽  
Tetsuo MORI ◽  
Mitsuaki YANO
Keyword(s):  
Growth Process ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Cdte Films
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