scholarly journals Effect of H2 heat treatment on crystallinity of CdTe films grown on GaAs substrates

2011 ◽  
Vol 15 (3) ◽  
Author(s):  
Chikara Onodera ◽  
Masaaki Yoshida
Keyword(s):  
Heat Treatment ◽  
Gaas Substrates ◽  
Cdte Films

Effect of H2 heat-treatment of excitonic emission in MOCVD-grown CdTe films on (100) GaAs substrates

1990 ◽  
Vol 99 (1-4) ◽  
pp. 459-463 ◽  
Author(s):  
Chikara Onodera ◽  
Mitsuru Ekawa ◽  
Tsunemasa Taguchi
Keyword(s):  
Heat Treatment ◽  
Gaas Substrates ◽  
Excitonic Emission ◽  
Cdte Films

Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates

2010 ◽  
Vol 49 (7) ◽  
pp. 071201
Author(s):  
Chikara Onodera ◽  
Masaaki Yoshida ◽  
Tsunemasa Taguchi
Keyword(s):  
Heat Treatment ◽  
Cdte Films

scholarly journals Effects of heat treatment on the composition and semiconductivity of electrochemically deposited CdTe films

1985 ◽  
Vol 58 (11) ◽  
pp. 4292-4295 ◽  
Author(s):  
Makoto Takahashi ◽  
Kohei Uosaki ◽  
Hideaki Kita ◽  
Yoshikazu Suzuki
Keyword(s):  
Heat Treatment ◽  
Electrochemically Deposited ◽  
Cdte Films

MeV ion channeling studies of (111) CdTe films on (111) GaAs substrates

1989 ◽  
Vol 66 (10) ◽  
pp. 5096-5098
Author(s):  
B. J. Wilkens ◽  
H. H. Farrell ◽  
K. Pollard ◽  
A. Erbil
Keyword(s):  
Ion Channeling ◽  
Gaas Substrates ◽  
Cdte Films

Auger electron spectroscopy study of pulsed-laser evaporated CdTe films on (100) GaAs

1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Pulsed Laser ◽  
Growth Surface ◽  
Spectroscopy Study ◽  
Gaas Substrates ◽  
Cdte Films

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.

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