Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy

1984 ◽  
Vol 2 (3) ◽  
pp. 417 ◽  
Author(s):  
R. N. Bicknell
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Gaas Substrates ◽  
Cdte Films

High-quality CdTe growth in the (100)-orientation on (100)-GaAs substrates by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 671-676 ◽  
Author(s):  
Kazuto Koike ◽  
Takashi Tanaka ◽  
Shuwei Li ◽  
Mitsuaki Yano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Gaas Substrates ◽  
Cdte Growth

Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Luminescence Properties ◽  
High Quality ◽  
Film Composition ◽  
Exciton Emission ◽  
Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (47) ◽  
pp. 10774-10779 ◽  
Author(s):  
Fangliang Gao ◽  
Lei Wen ◽  
Jingling Li ◽  
Yunfang Guan ◽  
Shuguang Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Gaas Substrates

The effects of the thickness of the large-mismatched amorphous In0.6Ga0.4As buffer layer on the In0.3Ga0.7As epi-films grown on the GaAs substrate have been systematically investigated.

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

1984 ◽  
Vol 44 (3) ◽  
pp. 313-315 ◽  
Author(s):  
R. N. Bicknell ◽  
R. W. Yanka ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
T. J. Magee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Perfection ◽  
Gaas Substrates ◽  
High Structural Perfection ◽  
Cdte Films

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

scholarly journals Tuning the transport and magnetism in a Cr–Bi2Se3topological insulator by Sb doping

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47789-47795 ◽  
Author(s):  
Y. Tung ◽  
C. W. Chong ◽  
C. W. Liao ◽  
C. H. Chang ◽  
S. Y. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Sb Doping

High-quality crystalline (Cr,Sb)-doped Bi2Se3(Cr-BSS) films were synthesized using molecular beam epitaxy (MBE).

Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

1988 ◽  
Vol 6 (4) ◽  
pp. 2821-2825 ◽  
Author(s):  
S. Hwang ◽  
R. L. Harper ◽  
K. A. Harris ◽  
N. C. Giles ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdte Films

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates
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