Auger electron spectroscopy study of pulsed-laser evaporated CdTe films on (100) GaAs

1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Pulsed Laser ◽  
Growth Surface ◽  
Spectroscopy Study ◽  
Gaas Substrates ◽  
Cdte Films

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.

Selective Oxidation and Etching of Reacted Pt Films on Gaas

1990 ◽  
Vol 181 ◽  
Author(s):  
Eliezer Weiss ◽  
Robert C. Keller ◽  
Margaret L. Kniffin ◽  
C.R. Helms
Keyword(s):  
Water Vapor ◽  
Auger Electron Spectroscopy ◽  
Selective Oxidation ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Gallium Oxide ◽  
Auger Electron ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Pt Films

ABSTRACTThe oxidation of prereacted Pt films on (100)-oriented n-GaAs substrates was studied in the temperature range between 550 and 750°C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water vapor and hydrogen. The GaPt phase can be oxidized completely, whereas the inner PtAs2 and GaAs interfaces are left unoxidized. The oxidation of the platinum-gallium phase is self limited by the diffusion of the Ga through the gallium oxide overlayer. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.

Auger electron spectroscopy study of Ni3Si

1989 ◽  
Vol 23 (11) ◽  
pp. 1969-1973 ◽  
Author(s):  
I. Baker ◽  
R.A. Padgett ◽  
E.M. Schulson
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study

Auger electron spectroscopy study of reactive ion etched silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study ◽  
Etched Silicon
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