scholarly journals Observation of the Initial MBE Growth Process for the CdTe Films on (100)GaAs Substrates.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 321-324
Author(s):  
Tokuo YODO ◽  
Takeshi FURUSHOU ◽  
Tetsuo MORI ◽  
Mitsuaki YANO
Keyword(s):  
Growth Process ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Cdte Films

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Thermal Treatment Induced Dislocation Bundles in Gaas Substrates Studied by Scanning Infrared Polariscopy, Visible-Light Interferometry, Transmission Electron Microscopy, Makyoh and X-Ray Topography

2000 ◽  
Vol 6 (S2) ◽  
pp. 1104-1105
Author(s):  
P. Mock
Keyword(s):  
Plastic Deformation ◽  
Technical Problem ◽  
Sample Holder ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Topographic Survey ◽  
Key Factor ◽  
Peripheral Areas

It is well known that heat treatment induced plastic deformation of GaAs substrates is a key factor that reduces the yield of electronic devices in manufacturing processes on an industrial scale. Our recent X-ray topographic survey showed that a quite common, radiatively heated, non In-bonded sample holder design can cause severe plastic deformation in two-inch diameter GaAs (001) substrates when they are heated up to about 650 °C in a molecular beam epitaxy (MBE) growth chamber. Unintentional plastic deformation occurred for all three investigated MBE machines, which were of different make, but we overcame the technical problem by modifications to the sample holder of a user built MBE machine. At present, however, there is no theoretical model available that can satisfactorily describe the experimental observations including the spatial distribution of the majority of the dislocation bundles.The plastic deformation up to about 98 % is realised by bundles of dislocations which start at the sample edges around the four <100> peripheral areas,

Stability of the step distribution and MBE growth mechanisms on vicinal GaAs substrates

1998 ◽  
Vol 123-124 ◽  
pp. 699-703 ◽  
Author(s):  
X. Marcadet ◽  
J. Olivier ◽  
J. Nagle
Keyword(s):  
Growth Mechanisms ◽  
Mbe Growth ◽  
Gaas Substrates

MBE Growth of MCT on GaAs Substrates at AIM

2012 ◽  
Vol 41 (10) ◽  
pp. 2828-2832 ◽  
Author(s):  
J. Wenisch ◽  
D. Eich ◽  
H. Lutz ◽  
T. Schallenberg ◽  
R. Wollrab ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gaas Substrates

MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers

2020 ◽  
Vol 542 ◽  
pp. 125688
Author(s):  
Yong Li ◽  
Xiaoming Li ◽  
Ruiting Hao ◽  
Jie Guo ◽  
Yunpeng Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layers ◽  
High Quality ◽  
Mbe Growth ◽  
Gaas Substrates

Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters

2000 ◽  
Vol 3 (5-6) ◽  
pp. 511-515 ◽  
Author(s):  
A Georgakilas ◽  
K Tsagaraki ◽  
E Makarona ◽  
G Constantinidis ◽  
M Adroulidaki ◽  
...  
Keyword(s):  
Short Wavelength ◽  
Mbe Growth ◽  
Gaas Substrates

Mbe Growth pf Ca5Sr5F2 on (100), (111), (511), and (711) GaAs Surfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
K. Young ◽  
S. Horng ◽  
A. Kahn ◽  
Julia M. Phillips
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystallographic Direction ◽  
Mbe Growth ◽  
Gaas Substrates

ABSTRACTWe have used molecular beam epitaxy to grow CaxSr1−xF2 films of various thicknesses on GaAs substrates with different orientations, i.e. (100), (111)A, (511)A, (511)B, (711)A and (711)B. On all orientations, the same crystallographic direction is normal to the surface in both the substrate and fluoride film. For all orientations except (111), the fluoride surface is reconstructed with (111) facets. Without annealing, the best crystallinity is obtained for the (100), (111) and (511)B orientations.

MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
A.E. Milokhin ◽  
I.E. Trofimov ◽  
M.V. Petrov ◽  
F.F. Balakirev ◽  
V.D. Kuzmin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Buffer Layer ◽  
Lattice Constant ◽  
Strong Influence ◽  
High Crystalline Quality ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates

Semiconductor heterostuctures ZnxCd1−xTe/CdTe were found to be of interest recently due to their potential practical usage. The reason for this is the beautiful variety of electrical heterostucture properties which arise from the strong influence of elastic deformation distribution. Thin epilayer films and superlattices ZnxCd1−xTe/CdTe were prepared on GaAs semi-isolator substrates by MBE technology with RHEED oscillation measurements of the deposited layers. X-ray measurements have shown high crystalline quality of the samples.We have performed Raman scattering studies of ZnxZnxCd1−xTe/CdTe structures. The data obtained were interpreted as a proff of the pseudomorphous growth model. That is, ZnxCd1−xTe/CdTe SLS keeps the lattice constant of the buffer layer.

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