Effect of minority‐carrier injection on Schottky‐barrier heights that approach the semiconductor band gap

1976 ◽  
Vol 13 (4) ◽  
pp. 876-883 ◽  
Author(s):  
C. H. Huang ◽  
C. R. Crowell
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Minority Carrier ◽  
Carrier Injection ◽  
Barrier Heights

scholarly journals Band gap and Schottky barrier heights of multiferroic BiFeO3

2007 ◽  
Vol 90 (13) ◽  
pp. 132903 ◽  
Author(s):  
S. J. Clark ◽  
J. Robertson
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Heights ◽  
Multiferroic Bifeo3

scholarly journals Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact

Coatings ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 388
Author(s):  
Jeongsoo Hong ◽  
Ki Hyun Kim ◽  
Kyung Hwan Kim
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Characteristic Curve ◽  
Schottky Contact ◽  
Current Transport ◽  
Carrier Injection ◽  
Voltage Measurement ◽  
Barrier Heights ◽  
Current Transport Mechanism ◽  
Current Voltage

The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection.

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Schottky Barrier ◽  
Minority Carrier ◽  
Series Resistance ◽  
Amorphous Semiconductors ◽  
Physical Parameters ◽  
Schottky Barrier Diodes ◽  
Carrier Injection ◽  
Current Voltage ◽  
First Time ◽  
Hydrogenated Amorphous

The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.

Schottky Barriers on a-Si:H,F/a-Si,Ge:H,F Superlattices

1987 ◽  
Vol 95 ◽  
Author(s):  
V. Chu ◽  
J. P. Conde ◽  
S. Aljishi ◽  
D. S. Shen ◽  
Z E. Smith ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Carrier Mobility ◽  
Schottky Barrier Height ◽  
Minority Carrier ◽  
Voltage Dependence ◽  
Internal Quantum Efficiency ◽  
Schottky Barriers ◽  
Multilayer Structures ◽  
Barrier Heights ◽  
Minority Carrier Mobility

AbstractWe report measurements of Schottky barrier heights and minority carrier mobilitylifetime products of multilayer structures composed of a-Si:H,F and a-Si,Ge:H,F. These layers are grown by r.f. glow discharge decompostion of SiF4, GeF4, and H2 in the a-Si,Ge:H,F (well) layer and of SiF4 and H2 in the a-Si:H,F (barrier) layer.Schottky barrier height ΦB of Pt is measured using internal photoemission measurements. The minority carrier mobility-lifetime product (μτ)p is extracted from a fit of the voltage dependence of internal quantum efficiency to the Hecht expression. Both ΦB and (μτ)p are measured as a function of barrier and well thicknesses.

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights
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