Contact area dependence of minority‐carrier injection in Schottky barrier diodes

1974 ◽  
Vol 45 (3) ◽  
pp. 1442-1443 ◽  
Author(s):  
R. A. Clarke ◽  
M. A. Green ◽  
J. Shewchun
Keyword(s):  
Schottky Barrier ◽  
Contact Area ◽  
Minority Carrier ◽  
Schottky Barrier Diodes ◽  
Carrier Injection

Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Schottky Barrier ◽  
Minority Carrier ◽  
Series Resistance ◽  
Amorphous Semiconductors ◽  
Physical Parameters ◽  
Schottky Barrier Diodes ◽  
Carrier Injection ◽  
Current Voltage ◽  
First Time ◽  
Hydrogenated Amorphous

The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.

scholarly journals The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 282
Author(s):  
Xiuxia Yang ◽  
Zhe Cheng ◽  
Zhiguo Yu ◽  
Lifang Jia ◽  
Lian Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Barrier Layer ◽  
Contact Area ◽  
Reverse Current ◽  
Schottky Barrier Diodes ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
State Resistance

AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches exhibit the lower on-state resistance (RON) than that with the conventional plane one. It can be explained that the anode trenches made the Schottky metal directly contact to the 2DEG at the sidewall of the AlGaN/GaN interface, removing the AlGaN barrier layer in the conventional plane anode. In addition, the RON of the SBDs with circular trenches is smaller than that of the SBDs with stripe ones. Furthermore, the RON decreases with the increasing rows of anode trenches, which can be attributed to the increased contact area between the Schottky metal and the 2DEG. For the reverse characteristics, the anode trenches do not lead to performance degradation. The fabricated devices exhibit the low reverse current (IR, IR < 1 μA/mm), and the breakdown voltage (VBK) remains unchanged with different anode geometries.

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