scholarly journals Band gap and Schottky barrier heights of multiferroic BiFeO3

2007 ◽  
Vol 90 (13) ◽  
pp. 132903 ◽  
Author(s):  
S. J. Clark ◽  
J. Robertson
Keyword(s):  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Heights ◽  
Multiferroic Bifeo3

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

scholarly journals Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl
Keyword(s):  
Schottky Barrier ◽  
Sulfur Segregation ◽  
Barrier Heights

Schottky barrier heights of epitaxial Ni–silicides on Si(111)

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Ni Silicides

scholarly journals Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

2021 ◽  
Vol 129 (17) ◽  
pp. 175304
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Free Metal
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