Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

Schottky barrier heights of molecular beam epitaxial metal‐AlGaAs structures

1981 ◽  
Vol 38 (8) ◽  
pp. 636-638 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Properties and Applications of Molecular Beam Epitaxial Silicides

1986 ◽  
Vol 67 ◽  
Author(s):  
K. L. Wang ◽  
Y. C. Kao
Keyword(s):  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Solid Phase ◽  
Deep Level ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights ◽  
Metal Silicides ◽  
Microelectronics Technology

ABSTRACTTransition metal silicides are now being used as essential and integral elements of microelectronics technology. Epitaxial growth and deposition provide additional flexibility for many device and circuit applications.In this paper, various epitaxial growth techniques, namely solid phase epitaxy and molecular beam epitaxy are reviewed. The resulting morphology, crystallinity, and Schottky barrier heights as well as deep-level defects are contrasted. The parallel and perpendicular strains as a function of film thickness is reported.Application of the epitaxial silicide in improving conventional integrated circuits as well as in fabricating new devices are discussed.

Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs

1996 ◽  
Vol 74 (S1) ◽  
pp. 104-107
Author(s):  
Z. Pang ◽  
P. Mascher ◽  
J. G. Simmons ◽  
D. A. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Gas Source ◽  
Layer Increase ◽  
Electrode Metal

In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

1998 ◽  
Vol 84 (2) ◽  
pp. 934-939 ◽  
Author(s):  
R. F. C. Farrow ◽  
D. Weller ◽  
R. F. Marks ◽  
M. F. Toney ◽  
David J. Smith ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document