Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Schottky Barrier ◽  
Minority Carrier ◽  
Series Resistance ◽  
Amorphous Semiconductors ◽  
Physical Parameters ◽  
Schottky Barrier Diodes ◽  
Carrier Injection ◽  
Current Voltage ◽  
First Time ◽  
Hydrogenated Amorphous

The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.

Statistical Analysis of the Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

2018 ◽  
Vol 24 (8) ◽  
pp. 5582-5586
Author(s):  
R Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electron Beam Evaporation ◽  
Statistical Distribution ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
The Mean

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Φb) and donar concentration (Nd) values are determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS) and shunt resistance (RSh) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm−3, with a normal deviation of 0.018 × 1017 cm−3 respectively.

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics
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