Nanoporous Materials Integration Into Advanced Microprocessors

2005 ◽  
Vol 863 ◽  
Author(s):  
E. Todd Ryan ◽  
Cathy Labelle ◽  
Satya Nitta ◽  
Nicholas C.M. Fuller ◽  
Griselda Bonilla ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Nanoporous Materials ◽  
Plasma Damage ◽  
Interlayer Dielectric ◽  
Materials Integration ◽  
Nanoporous Films ◽  
Organosilicate Glass ◽  
Barrier Metal ◽  
Metal Liner ◽  
Nanoporous Surface

AbstractFuture microprocessor technologies will require interlayer dielectric (ILD) materials with a dielectric constant (κ-value) less than 2.5. Organosilicate glass (OSG) materials must be nanoporous to meet this demand. However, the introduction of nanopores creates many integration challenges. These challenges include 1) integrating nanoporous films with low mechanical strength into conventional process flows, 2) managing etch profiles, 3) processinduced damage to the nanoporous ILD, and 4) controlling the metal/nanoporous ILD interface. This paper reviews research to maximize mechanical strength by engineering optimal pore structures, controlling trench bottom roughness induced by etching and understanding its relationship to pore size, repairing plasma damage using silylation chemistry, and sealing a nanoporous surface for barrier metal (liner) deposition.

Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

2003 ◽  
Vol 766 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Mark L. O'Neill ◽  
Jean L. Vincent ◽  
Aaron S. Lukas ◽  
Brian K. Peterson ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Mechanical Strength ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicate Glass

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

Plasma Damage of Gate Oxide through the Interlayer Dielectric

1993 ◽  
Author(s):  
Shuji Hirao ◽  
Tatsuo Sugiyama ◽  
Takehito Yoshida ◽  
Kousaku Yano ◽  
Noboru Nomura
Keyword(s):  
Gate Oxide ◽  
Plasma Damage ◽  
Interlayer Dielectric

Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications

2005 ◽  
Vol 863 ◽  
Author(s):  
Jeannette M. Jacques ◽  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Robert Kraft
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Mechanical Strength ◽  
Crack Growth ◽  
Dielectric Films ◽  
Linear Relationships ◽  
Organosilicate Glass ◽  
Catastrophic Fracture ◽  
Electron Beam Curing ◽  
Silicon Based

AbstractFor 90 nm node devices, the group of materials known as organosilicate glass (OSG) has emerged as the predominant choice for intermetal dielectrics. A potential failure mechanism for this class of low-k dielectric films during the manufacturing process is catastrophic fracture due to channel cracking. The use of an electron beam curing process is being investigated for improvement in the mechanical strength of these silicon-based materials. Within this work, the effects of curing dose (micro-C/cm2) upon the mechanical properties of OSG thin films were characterized. For a set process voltage and current, linear relationships exist between the dose and several mechanical film properties. Channel crack growth velocities were also measured for these cured materials. As the cure dose is increased, the crack growth rate decreases according to a power law relationship. The structural film changes induced by the electron beam cure process are addressed, focusing on their impact upon the mechanical strength of OSG thin films.

All-carbocycle hydrocarbon thermosets with high thermal stability and robust mechanical strength for low-k interlayer dielectrics

2021 ◽  
Author(s):  
Yudi Feng ◽  
Ke Jin ◽  
Jia Guo ◽  
Changchun Wang
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
Dielectric Materials ◽  
High Thermal Stability ◽  
Thermal Stabilities ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Low Permittivity ◽  
Low K

The development of modern microelectronic industry calls for low permittivity interlayer dielectric materials with excellent thermal stabilities, robust mechanical strength and matching processability. Traditionally, it is difficult to fabricate materials...

2D nanostructures for water purification: graphene and beyond

Nanoscale ◽  
2016 ◽  
Vol 8 (33) ◽  
pp. 15115-15131 ◽  
Author(s):  
Saoirse Dervin ◽  
Dionysios D. Dionysiou ◽  
Suresh C. Pillai
Keyword(s):  
Mechanical Strength ◽  
Surface Area ◽  
Water Purification ◽  
Nanoporous Materials ◽  
Large Surface Area ◽  
Membrane Materials ◽  
Thin Structure

Owing to their atomically thin structure, large surface area and mechanical strength, 2D nanoporous materials are considered to be suitable alternatives for existing desalination and water purification membrane materials.

Oxygen radical and plasma damage of low-k organosilicate glass materials: Diffusion-controlled mechanism for carbon depletion

2009 ◽  
Vol 106 (1) ◽  
pp. 013311 ◽  
Author(s):  
M. A. Goldman ◽  
D. B. Graves ◽  
G. A. Antonelli ◽  
S. P. Behera ◽  
J. A. Kelber
Keyword(s):  
Oxygen Radical ◽  
Plasma Damage ◽  
Diffusion Controlled ◽  
Organosilicate Glass ◽  
Low K

Effects of He and Ar ion kinetic energies in protection of organosilicate glass from O2 plasma damage

2013 ◽  
Vol 31 (4) ◽  
pp. 041303 ◽  
Author(s):  
Joe Lee ◽  
Haseeb Kazi ◽  
Sneha Gaddam ◽  
Jeffry A. Kelber ◽  
David B. Graves
Keyword(s):  
Plasma Damage ◽  
Organosilicate Glass ◽  
O2 Plasma

Extent of plasma damage to porous organosilicate films characterized with nanoindentation, x-ray reflectivity, and surface acoustic waves

2006 ◽  
Vol 21 (12) ◽  
pp. 3161-3167 ◽  
Author(s):  
F. Iacopi ◽  
Y. Travaly ◽  
M. Van Hove ◽  
A.M. Jonas ◽  
J.M. Molina-Aldareguia ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Physical Analysis ◽  
Depth Sensing ◽  
Accurate Analysis ◽  
Plasma Damage ◽  
X Ray ◽  
Analysis Techniques ◽  
Direct Exposure ◽  
Organosilicate Glass

It is known that porous organosilicate glass (OSG) dielectrics tend to lose functional groups and become denser upon the chemical and physical action of the plasmas, but an accurate analysis and estimation of the depth and degree of film densification is not straightforward. In this study, we show that the combination of techniques like x-ray reflectivity, surface acoustic waves, and nanoindentation in depth-sensing and modulus mapping mode allow a complete and self-consistent physical analysis of the damage induced by the direct exposure of porous OSG films to different plasma ambients in reactive ion etching mode. We demonstrate for the chosen dielectric that the characteristics of the damage regions such as density and elastic modulus are very similar regardless of the reducing or oxidizing nature of the plasma. Nevertheless, the physical depth of the damage region shows large variation. Capabilities and limitations of each of the chosen analysis techniques are also discussed.

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