Plasma damage mechanisms in low k organosilicate glass and their inhibition by Ar ion bombardment

2014 ◽  
Vol 32 (2) ◽  
pp. 021302 ◽  
Author(s):  
Haseeb Kazi ◽  
Jeffry A. Kelber
Keyword(s):  
Ion Bombardment ◽  
Plasma Damage ◽  
Damage Mechanisms ◽  
Organosilicate Glass ◽  
Low K

Oxygen radical and plasma damage of low-k organosilicate glass materials: Diffusion-controlled mechanism for carbon depletion

2009 ◽  
Vol 106 (1) ◽  
pp. 013311 ◽  
Author(s):  
M. A. Goldman ◽  
D. B. Graves ◽  
G. A. Antonelli ◽  
S. P. Behera ◽  
J. A. Kelber
Keyword(s):  
Oxygen Radical ◽  
Plasma Damage ◽  
Diffusion Controlled ◽  
Organosilicate Glass ◽  
Low K

Plasma damage effects on low-k porous organosilicate glass

2010 ◽  
Vol 108 (9) ◽  
pp. 094110 ◽  
Author(s):  
H. Ren ◽  
G. A. Antonelli ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Plasma Damage ◽  
Organosilicate Glass ◽  
Low K

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

2008 ◽  
Vol 103 (7) ◽  
pp. 073303 ◽  
Author(s):  
Saburo Uchida ◽  
Seigo Takashima ◽  
Masaru Hori ◽  
Masanaga Fukasawa ◽  
Keiji Ohshima ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Plasma Damage ◽  
Damage Mechanisms ◽  
Plasma Etching Process ◽  
Low K

Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry

2008 ◽  
Vol 1079 ◽  
Author(s):  
Premysl Marsik ◽  
Adam Urbanowicz ◽  
Klara Vinokur ◽  
Yoel Cohen ◽  
Mikhail R Baklanov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Optical Model ◽  
Concentration Profiles ◽  
Atomic Concentration ◽  
Plasma Damage ◽  
Tof Sims ◽  
Plasma Treatments ◽  
Water Based ◽  
Low K

ABSTRACTPorous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.

Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

2001 ◽  
Vol 697 ◽  
Author(s):  
N.V. Edwards ◽  
J. Vella ◽  
Q. Xie ◽  
S. Zollner ◽  
D. Werho ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Optical Metrology ◽  
Dielectric Films ◽  
Electron Densities ◽  
Organosilicate Glass ◽  
Relative Porosity ◽  
Low K ◽  
Porosity Measurements

AbstractThe optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.

Subcritical Delamination of Dielectric and Metal Films from Low-k Organosilicate Glass (OSG) Thin Films in Buffered pH Solutions

2003 ◽  
Vol 795 ◽  
Author(s):  
Y. Lin ◽  
J. J. Vlassak ◽  
T. Y. Tsui ◽  
A. J. McKerrow
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Dielectric Materials ◽  
Barrier Films ◽  
Interface Delamination ◽  
Organosilicate Glass ◽  
Controlled Fracture ◽  
Ph Buffer ◽  
Subcritical Fracture ◽  
Low K

ABSTRACTUnderstanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends on the choice of barrier layers. For the OSG/TaN system, fracture takes place in the OSG layer near the interface, while in OSG/SiNx system, delamination occurs at the interface. Delamination behavior of both systems is well described by a hyperbolic sine model that had been developed previously based on a chemical reaction controlled fracture process at the crack tip. The threshold toughness of both systems decreases linearly with increasing pH value. The slopes of the reaction-controlled regime of the crack velocity curves for both systems are independent of pH as predicted by the model. Near transport-controlled regime behavior was observed in OSG/TaN system.

Nanoporous Materials Integration Into Advanced Microprocessors

2005 ◽  
Vol 863 ◽  
Author(s):  
E. Todd Ryan ◽  
Cathy Labelle ◽  
Satya Nitta ◽  
Nicholas C.M. Fuller ◽  
Griselda Bonilla ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Nanoporous Materials ◽  
Plasma Damage ◽  
Interlayer Dielectric ◽  
Materials Integration ◽  
Nanoporous Films ◽  
Organosilicate Glass ◽  
Barrier Metal ◽  
Metal Liner ◽  
Nanoporous Surface

AbstractFuture microprocessor technologies will require interlayer dielectric (ILD) materials with a dielectric constant (κ-value) less than 2.5. Organosilicate glass (OSG) materials must be nanoporous to meet this demand. However, the introduction of nanopores creates many integration challenges. These challenges include 1) integrating nanoporous films with low mechanical strength into conventional process flows, 2) managing etch profiles, 3) processinduced damage to the nanoporous ILD, and 4) controlling the metal/nanoporous ILD interface. This paper reviews research to maximize mechanical strength by engineering optimal pore structures, controlling trench bottom roughness induced by etching and understanding its relationship to pore size, repairing plasma damage using silylation chemistry, and sealing a nanoporous surface for barrier metal (liner) deposition.

Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

2019 ◽  
Vol 13 (3) ◽  
pp. 511-516 ◽  
Author(s):  
Romain Chanson ◽  
Remi Dussart ◽  
Thomas Tillocher ◽  
P. Lefaucheux ◽  
Christian Dussarrat ◽  
...  
Keyword(s):  
Plasma Damage ◽  
Damage Mitigation ◽  
Low K
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