Room-temperature ultrahigh vacuum bonding of Ge∕GaAs p-n heterojunction wafer using 300 eV hydrogen ion beam surface cleaning

2007 ◽  
Vol 25 (5) ◽  
pp. 1480 ◽  
Author(s):  
N. Razek ◽  
A. Schindler
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Surface Cleaning ◽  
Hydrogen Ion ◽  
Beam Surface

GaAs surface cleaning by low energy hydrogen ion beam treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
N. Razek ◽  
K. Otte ◽  
T. Chassé ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface ◽  
Ion Beam Treatment

Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO2 Interface by Ion Beam Hydrogenation

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Kar ◽  
K. Srikanth ◽  
S. Ashok
Keyword(s):  
Metal Oxide ◽  
Room Temperature ◽  
Ion Beam ◽  
Oxide Thickness ◽  
Hydrogen Ion ◽  
Frequency Measurements ◽  
Silicon Structures ◽  
Voltage Frequency ◽  
Electronic Defects ◽  
Induced Defects

ABSTRACTElectronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.

scholarly journals Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Haolin Li ◽  
Jilong Tang ◽  
Fengyuan Lin ◽  
Dengkui Wang ◽  
Dan Fang ◽  
...  
Keyword(s):  
Optical Property ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Ion Beam ◽  
Optoelectronic Devices ◽  
Surface Cleaning ◽  
Zno Nanowires ◽  
Simple Method ◽  
Plasma Treatments ◽  
Ar Plasma

Abstract ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts as an alternate pathway for the de-excitation of carriers. Ar plasma treatment is a useful method to enhance the optical property of ZnO nanowires. It is necessary to study the optical properties of ZnO nanowires treated by plasma with different energies. Here, we used laser spectroscopy to investigate the plasma treatments with various energies on ZnO nanowires. Significantly improved emission has been observed for low and moderate Ar plasma treatments, which can be ascribed to the surface cleaning effects and increased neutral donor-bound excitons. It is worth mentioning that about 60-folds enhancements of the emission at room temperature can be achieved under 200 W Ar plasma treatment. When the plasma energy exceeds the threshold, high-ion beam energy will cause irreparable damage to the ZnO nanowires. Thanks to the enhanced optical performance, random lasing is observed under optical pumping at room temperature. And the stability has been improved dramatically. By using this simple method, the optical property and stability of ZnO nanowires can be effectively enhanced. These results will play an important role in the development of low dimensional ZnO-based optoelectronic devices.

Hydrogen Effects on the Fracture of Thin Tantalum Nitride Films

1994 ◽  
Vol 356 ◽  
Author(s):  
N. R. Moody ◽  
S. K. Venkataraman ◽  
B. Bastasz ◽  
J. E. Angelo ◽  
W. W. Gerberich
Keyword(s):  
Room Temperature ◽  
Vacuum Annealing ◽  
Ion Beam ◽  
Hydrogen Ion ◽  
Tantalum Nitride ◽  
Work Of Adhesion ◽  
Sapphire Substrates ◽  
Deuterium Concentration ◽  
Sputter Deposited ◽  
Hardness Values

AbstractIn this study we used nanoindentation and continuous microscratch testing to determine the effect of hydrogen on the work of adhesion and fracture toughness of thin tantalum nitride films. These films were sputter-deposited on sapphire substrates to a thickness of 600 nm followed by the heating of some films in deuterium and some in vacuum at 300°C. Deuterium was used in this study because it is much easier to detect and measure than hydrogen. Ion beam spectroscopy showed that exposure to deuterium produced a uniform internal deuterium concentration of 2000 appm. Nanoindentation showed that exposure to deuterium at 300°C and vacuum annealing at 300°C had little effect on elastic modulus and hardness values of these films at room temperature. In contrast, the microscratch tests at room temperature revealed that the work of adhesion decreased from 24.5 J/m2 after vacuum annealing to 9.1 J/m2 after deuterium charging and demonstrated that tantalum nitride films have a strong susceptibility to hydrogen embrittlement.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

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