Hydrogen Effects on the Fracture of Thin Tantalum Nitride Films

1994 ◽  
Vol 356 ◽  
Author(s):  
N. R. Moody ◽  
S. K. Venkataraman ◽  
B. Bastasz ◽  
J. E. Angelo ◽  
W. W. Gerberich
Keyword(s):  
Room Temperature ◽  
Vacuum Annealing ◽  
Ion Beam ◽  
Hydrogen Ion ◽  
Tantalum Nitride ◽  
Work Of Adhesion ◽  
Sapphire Substrates ◽  
Deuterium Concentration ◽  
Sputter Deposited ◽  
Hardness Values

AbstractIn this study we used nanoindentation and continuous microscratch testing to determine the effect of hydrogen on the work of adhesion and fracture toughness of thin tantalum nitride films. These films were sputter-deposited on sapphire substrates to a thickness of 600 nm followed by the heating of some films in deuterium and some in vacuum at 300°C. Deuterium was used in this study because it is much easier to detect and measure than hydrogen. Ion beam spectroscopy showed that exposure to deuterium produced a uniform internal deuterium concentration of 2000 appm. Nanoindentation showed that exposure to deuterium at 300°C and vacuum annealing at 300°C had little effect on elastic modulus and hardness values of these films at room temperature. In contrast, the microscratch tests at room temperature revealed that the work of adhesion decreased from 24.5 J/m2 after vacuum annealing to 9.1 J/m2 after deuterium charging and demonstrated that tantalum nitride films have a strong susceptibility to hydrogen embrittlement.

The Effects of High Temperature Exposure on the Fracture of Thin Tantalum Nitride Films

1994 ◽  
Vol 343 ◽  
Author(s):  
N. R. Moody ◽  
S. K. Venkataraman ◽  
J. C Nelson ◽  
W Worobey ◽  
Andw. W. Gerberich
Keyword(s):  
Room Temperature ◽  
Tantalum Nitride ◽  
Interfacial Toughness ◽  
Sputtered Films ◽  
Sapphire Substrates ◽  
Nominal Thickness ◽  
Sputter Deposited ◽  
Temperature Exposure ◽  
Comparison Of The Results ◽  
Very High

ABSTRACTContinuous microscratch testing was used in this study to determine the effects of elevated temperature exposure on the adhesion and toughness of thin tantalum nitride films. These films were sputter-deposited at room temperature on sapphire substrates to a nominal thickness of 600 nm with some films heated to 600°C in vacuum while others were heated to 600°C in air. The films heated in vacuum exhibited no changes in composition or structure while the films heated in air completely transformed to tantalum pentoxide. Comparison of the results shows that the interfacial fracture toughness increases from 0.5 MPa-m1/2 for as-sputtered films to 0.8 MPa-m1/2 for films heated in air. However, the toughness increases to more than 3.0 MPa-m1/2 when the films are heated in vacuum. The increase in toughness values follows the reduction in deposition defect content where formation of an oxygen deficient tantalum oxide layer in air from the as-sputtered film increases interfacial toughness slightly while full densification of the tantalum nitride films in vacuum increases toughness to very high levels.

Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
L. H. Greene ◽  
W. L. Feldmann ◽  
J. M. Rowell ◽  
B. Batlogg ◽  
R. Hull ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Residual Resistance ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity ◽  
Modulation Wavelength

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO2 Interface by Ion Beam Hydrogenation

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Kar ◽  
K. Srikanth ◽  
S. Ashok
Keyword(s):  
Metal Oxide ◽  
Room Temperature ◽  
Ion Beam ◽  
Oxide Thickness ◽  
Hydrogen Ion ◽  
Frequency Measurements ◽  
Silicon Structures ◽  
Voltage Frequency ◽  
Electronic Defects ◽  
Induced Defects

ABSTRACTElectronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 195-200 ◽  
Author(s):  
A.V. Frantskevich ◽  
Anis M. Saad ◽  
A.K. Fedotov ◽  
E.I. Rau ◽  
A.V. Mazanik ◽  
...  
Keyword(s):  
Room Temperature ◽  
Surface Defects ◽  
Vacuum Annealing ◽  
Plasma Source ◽  
Hydrogen Ion ◽  
Conductivity Type ◽  
Boron Doped ◽  
Hydrogen Implantation ◽  
Hydrogen Ion Implantation ◽  
Sem Investigation

The main goal of this work is to demonstrate the correlation between the density and type of surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers, and the number of buried defects formed by different dose hydrogen preimplantation. Standard commercial 12 ⋅cm boron-doped and 4.5 ⋅cm phosphorous-doped Cz Si wafers were subjected to hydrogen ion implantation at room temperature with the energy 100 keV and doses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source at a temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС. The experiments have shown that the density and type of the surface defects depend significantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, and conductivity type of silicon. Optimization of the above-mentioned parameters makes it possible to create the substrates containing a buried dielectric SixNy layer and having a practically defect-free surface.

Micro-Mechanical Characterization of Tantalum Nitride Thin Films on Sapphire Substrates

1994 ◽  
Vol 343 ◽  
Author(s):  
Shankar K. Venkataraman ◽  
John C. Nelson ◽  
Neville R. Moody ◽  
David L. Kohlstedt ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Film Thickness ◽  
Film Surface ◽  
Interfacial Fracture ◽  
Tantalum Nitride ◽  
Interfacial Fracture Toughness ◽  
Sapphire Substrates ◽  
Thin Film Resistors ◽  
Sputter Deposited

ABSTRACTThe adhesion of Ta2N thin films – often used as thin film resistors – to sapphire substrates has been studied by continuous microindentation and microscratch techniques. Ta2N films, 0.1-0.63μm in thickness, were sputter deposited onto single crystal substrates. Continuous microscratch experiments were performed by driving a conical diamond indenter simultaneously into and across the film surface until stresses high enough to delaminate the film were developed. Continuous microindentation experiments were performed to induce film spallation by normal indentation. From both of these experiments, interfacial fracture toughness was determined as a function of film thickness. The interfacial fracture toughness obtained from continuous microscratch experiments is 0.53±0.17 MPa√m, independent of film thickness. This observation indicates that there is almost no plastic deformation in the film prior to fracture so that a ‘true’ interfacial fracture toughness is measured. For the 0.63 µm thick film, continuous microindentation data yielded a fracture toughness of 0.61 ±0.08 MPa√m, which matches closely the value obtained from the microscratch test. Hence, the continuous microscratch and microindentation techniques are viable methods for determining the interfacial fracture toughness in such bi-material systems.

Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering

2012 ◽  
Vol 538-541 ◽  
pp. 154-157
Author(s):  
Peng Juan Liu ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
Xing Min Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Ion Beam ◽  
Composition Analysis ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Sputter Deposited

Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

Study of Metastable Fe-W Films

1981 ◽  
Vol 7 ◽  
Author(s):  
Gerhard Göltz ◽  
Rouel Fernandez ◽  
Marc-A. Nicolet ◽  
Devendra K. Sadana
Keyword(s):  
Thermal Annealing ◽  
Solid Solubility ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Lattice Structure ◽  
Metastable States ◽  
Low Doses ◽  
High Doses ◽  
Sputter Deposited ◽  
Equilibrium Solid Solubility

ABSTRACTXenon irradiation of Fe-W multilayers at room temperature (R.T.) can produce two types of metastable states: low doses (< 1 × 1016 Xe/cm2 ) extend the equilibrium solid solubility of W in Fe and vice versa, maintaining the equilibrium b.c.c. lattice structure of Fe and W; at high doses (> 1 × 1016 Xe/ cm2 ) and in the vicinity of the composition Fe70W30, amorphization can occur. In comparison, RF sputter-deposited FexWl-x films were amorphous over the whole range (0.35<x < 0.79) investigated. The recrystallization temperatures of these amorphous layers exceed 600°C for 15 min vacuum annealing. Whereas Fe-W compounds always form during thermal annealing, these compounds are normally not found after Xe-irradiation of multilayers.

Phase Formation and Mechanical Properties of Multiphase Carbide Coatings

1999 ◽  
Vol 594 ◽  
Author(s):  
J. E. Krzanowski ◽  
S. H. Koutzaki ◽  
J. Nainaparampil ◽  
J. S. Zabinski
Keyword(s):  
Mechanical Properties ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
X Ray ◽  
Sapphire Substrates ◽  
Carbide Coatings ◽  
Ternary Carbide ◽  
Hardness Values ◽  
Mo Additions

AbstractWe have investigated nano-structured multiphase coatings consisting of mixed carbide components. Two ternary carbide systems, Ti-Mo-C and Ti-Si-C, were examined. Coatings were fabricated by co-sputtering from carbide targets, thereby allowing a complete range of film compositions to be obtained in each system. Films were deposited on Si and sapphire substrates at temperatures ranging from room temperature to 650°C. Film compositions were determined using XPS, and x-ray diffraction and TEM analysis were used to examine the films for texture, grain size, phase stability and the potential for creating nano-structured multiphase films. Mo was found to be soluble in TiC up to about 80% Mo, and between 85–95% Mo a multiphase structure was obtained. The hardness of these films generally did not improve due to the Mo additions. For the Ti-Si-C films, X-ray diffraction results were consistent with the formation of cubic SiC and TiC phases. In these films, the hardness was found to improve with SiC additions optimally giving hardness values of about twice that of TiC alone.

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