Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO2 Interface by Ion Beam Hydrogenation

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Kar ◽  
K. Srikanth ◽  
S. Ashok
Keyword(s):  
Metal Oxide ◽  
Room Temperature ◽  
Ion Beam ◽  
Oxide Thickness ◽  
Hydrogen Ion ◽  
Frequency Measurements ◽  
Silicon Structures ◽  
Voltage Frequency ◽  
Electronic Defects ◽  
Induced Defects

ABSTRACTElectronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.

Hydrogen Effects on the Fracture of Thin Tantalum Nitride Films

1994 ◽  
Vol 356 ◽  
Author(s):  
N. R. Moody ◽  
S. K. Venkataraman ◽  
B. Bastasz ◽  
J. E. Angelo ◽  
W. W. Gerberich
Keyword(s):  
Room Temperature ◽  
Vacuum Annealing ◽  
Ion Beam ◽  
Hydrogen Ion ◽  
Tantalum Nitride ◽  
Work Of Adhesion ◽  
Sapphire Substrates ◽  
Deuterium Concentration ◽  
Sputter Deposited ◽  
Hardness Values

AbstractIn this study we used nanoindentation and continuous microscratch testing to determine the effect of hydrogen on the work of adhesion and fracture toughness of thin tantalum nitride films. These films were sputter-deposited on sapphire substrates to a thickness of 600 nm followed by the heating of some films in deuterium and some in vacuum at 300°C. Deuterium was used in this study because it is much easier to detect and measure than hydrogen. Ion beam spectroscopy showed that exposure to deuterium produced a uniform internal deuterium concentration of 2000 appm. Nanoindentation showed that exposure to deuterium at 300°C and vacuum annealing at 300°C had little effect on elastic modulus and hardness values of these films at room temperature. In contrast, the microscratch tests at room temperature revealed that the work of adhesion decreased from 24.5 J/m2 after vacuum annealing to 9.1 J/m2 after deuterium charging and demonstrated that tantalum nitride films have a strong susceptibility to hydrogen embrittlement.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

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