Growth of diamond at room temperature by an ion‐beam sputter deposition under hydrogen‐ion bombardment

1985 ◽  
Vol 58 (4) ◽  
pp. 1693-1695 ◽  
Author(s):  
Makoto Kitabatake ◽  
Kiyotaka Wasa
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Sputter Deposition ◽  
Hydrogen Ion ◽  
Ion Beam Sputter Deposition

scholarly journals Growth of Cu2O Nanopyramids by Ion Beam Sputter Deposition

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
Assamen Ayalew Ejigu
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Ion Beam ◽  
Linear Sweep Voltammetry ◽  
Sputter Deposition ◽  
Exciton Luminescence ◽  
X Ray Diffraction ◽  
Linear Sweep ◽  
X Ray ◽  
Ion Beam Sputter Deposition

In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge and height lengths. Both X-ray diffraction and Raman spectroscopy characterizations showed the structures were single-phase polycrystalline Cu2O, and the room-temperature photoluminescence investigation showed interestingly green and blue exciton luminescence emissions. All Mott—Schottky, linear sweep voltammetry, and photocurrent measurements indicated that the conductivity of the Cu2O pyramids is of n-type.

scholarly journals Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao
Keyword(s):  
Electrode Materials ◽  
Variable Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Flow Rates ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
P Type ◽  
Quartz Substrates ◽  
Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.

Ion beam sputter deposition of low-defect EUV mask blanks on 6-in. LTEM substrates in a real production environment

2002 ◽  
Author(s):  
Hans W. Becker ◽  
Lutz Aschke ◽  
Birgit Schubert ◽  
Juergen Krieger ◽  
Frank Lenzen ◽  
...  
Keyword(s):  
Ion Beam ◽  
Sputter Deposition ◽  
Production Environment ◽  
Ion Beam Sputter Deposition

Ion beam sputter deposition onto levitated and stalk mounted laser fusion targets

1982 ◽  
Vol 20 (4) ◽  
pp. 1331-1335 ◽  
Author(s):  
D. A. Glocker ◽  
J. P. Drumheller ◽  
J. R. Miller
Keyword(s):  
Ion Beam ◽  
Sputter Deposition ◽  
Laser Fusion ◽  
Ion Beam Sputter Deposition

Ion beam sputter deposition of layered magnetic thin films

1983 ◽  
Vol 35 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
J.W. Smits ◽  
H.A. Algra ◽  
U. Enz ◽  
R.P. van Stapele
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

1991 ◽  
Vol 116 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Angus Kingon ◽  
Michael Ameen ◽  
Orlando Auciello ◽  
Kenneth Gifford ◽  
Husam Al-Shareef ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ferroelectric Thin Films ◽  
Ion Beam Sputter Deposition
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