Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

2006 ◽  
Vol 24 (3) ◽  
pp. 678-681 ◽  
Author(s):  
Jihoon Choi ◽  
Seokhoon Kim ◽  
Jinwoo Kim ◽  
Hyunseok Kang ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Remote Plasma ◽  
Si Substrates ◽  
N2 Plasma

Effects of N[sub 2] RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO[sub 2] Films

2006 ◽  
Vol 9 (3) ◽  
pp. F13 ◽  
Author(s):  
Jihoon Choi ◽  
Seokhoon Kim ◽  
Hyunseok Kang ◽  
Hyeongtag Jeon ◽  
Choelhwyi Bae
Keyword(s):  
Atomic Layer ◽  
Electrical Characteristics ◽  
Remote Plasma

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer

2008 ◽  
Vol 52 (4) ◽  
pp. 1114-1119 ◽  
Author(s):  
Hyungseok Hong ◽  
Seokhoon Kim ◽  
Sanghyun Woo ◽  
Hyungchul Kim ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Metal Layer ◽  
Atomic Layer ◽  
Remote Plasma
Sign in / Sign up

Export Citation Format

Share Document