Effects of N[sub 2] RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO[sub 2] Films

2006 ◽  
Vol 9 (3) ◽  
pp. F13 ◽  
Author(s):  
Jihoon Choi ◽  
Seokhoon Kim ◽  
Hyunseok Kang ◽  
Hyeongtag Jeon ◽  
Choelhwyi Bae
Keyword(s):  
Atomic Layer ◽  
Electrical Characteristics ◽  
Remote Plasma

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

2013 ◽  
Vol 109 ◽  
pp. 64-67 ◽  
Author(s):  
Chen-Chien Li ◽  
Kuei-Shu Chang-Liao ◽  
Chung-Hao Fu ◽  
Tsung-Lin Hsieh ◽  
Li-Ting Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Remote Plasma ◽  
Mos Devices ◽  
Layer Deposition ◽  
High K

Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0-0.3)

2021 ◽  
Author(s):  
Woohui Lee ◽  
Changmin Lee ◽  
Jinyong Kim ◽  
Jehoon Lee ◽  
Deokjoon Eom ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Alloy Film ◽  
Electrical Characteristics

To understand the effect of H2S pre-annealing treatment on a Si1-xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1-xGex were studied while varying the Ge concentration (x value)...

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

2007 ◽  
Vol 90 (23) ◽  
pp. 232904 ◽  
Author(s):  
Y. C. Chang ◽  
H. C. Chiu ◽  
Y. J. Lee ◽  
M. L. Huang ◽  
K. Y. Lee ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Electrical Characteristics

Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer

2008 ◽  
Vol 52 (4) ◽  
pp. 1114-1119 ◽  
Author(s):  
Hyungseok Hong ◽  
Seokhoon Kim ◽  
Sanghyun Woo ◽  
Hyungchul Kim ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Metal Layer ◽  
Atomic Layer ◽  
Remote Plasma
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