Initial stages of GaAs and AlAs growth on Si substrates: Atomic-layer epitaxy

1989 ◽  
Vol 7 (4) ◽  
pp. 700 ◽  
Author(s):  
K. Kitahara
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Si Substrates

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

1992 ◽  
Vol 21 (10) ◽  
pp. 965-970 ◽  
Author(s):  
J. R. Gong ◽  
S. Nakamura ◽  
M. Leonard ◽  
S. M. Bedair ◽  
N. A. El-Masry
Keyword(s):  
Low Temperature ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Substrates

Atomic Layer Epitaxy of GaAs on Si by Mocvd

1989 ◽  
Vol 145 ◽  
Author(s):  
N.H. Karam ◽  
V.E. Haven ◽  
S.M. Vernon ◽  
J.C. Tran ◽  
N.A. El-Masry
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Deposition Technique ◽  
Nucleation Layer ◽  
Selective Area Epitaxy ◽  
Si Substrates ◽  
Gaas On Si ◽  
Gaas Films ◽  
Si Films

AbstractEpitaxial GaAs films have been deposited on Si substrates using Atomic Layer Epitaxy (ALE) for the first time. This has been achieved in a SPI-MO CVD™ 450 reactor especially modified foroALE. After an initial high temperature bakeout, a nucleation layer 100-300 Å thick was deposited by ALE. Film growth was then resumed by conventional MOCVD to achieve the desired film thickness. The surface morphologies of the deposited films were found to be comparable to current state of the art conventional GaAs on Si films deposited by the two-step growth process in the same reactor.Selective area epitaxy of GaAs on Si has also been achieved on Si02-coated and patterned Si wafers. The standard two-step deposition technique resulted in epitaxial growth in the patterned windows and poly-GaAs on the oxide mask, while ALE growth resulted in deposition only in the etched windows with no poly-growth on the oxide mask. We will report on the potential of this new deposition technique in producing high quality GaAs-on-Si films.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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