Influence of Ion Bombardment on the Nucleation and Growth of Plasna Deposited Amorphous Silicon
Keyword(s):
Ion Flux
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AbstractReal-time spectroscopic phase modulated ellipsometry is used to study the influence of ion bombardment on the growth of plasma deposited amorphous silicon (a-Si:H). The influence of the relative ion flux impinging on the substrate is discussed by comparing a-Si:H films deposited in RF and multipole discharges. A nucleation process is observed in the early stage of the growth of a-Si:H deposited on chromium substrates. When the ion bombardment is strong (multipole plasma) a coalescence of the island structure is observed leading to the formation of a high density film with a smooth interface.