Compliant Stress-Engineered Interconnects for Next-Generation Packaging

2004 ◽  
Author(s):  
Kevin M. Klein ◽  
Suresh K. Sitaraman
Keyword(s):  
Life Stress ◽  
Low Cost ◽  
Intrinsic Stress ◽  
Wafer Level ◽  
Element Analysis ◽  
Operational Conditions ◽  
Technology Roadmap ◽  
Fine Pitch ◽  
Cte Mismatch ◽  
Future Demands

Future demands of microelectronic packing include increasing input/output (I/O) densities, providing high frequency capabilities, and maintaining sufficient reliability while keeping costs minimal. Organic materials with Coefficients of Thermal Expansions (CTE) over four times greater than silicon will continue to be used as future substrate materials because of their low cost. Consistent with the International Technology Roadmap for Semiconductors (ITRS, 2003), chip-to-substrate interconnects will need to have a pitch approximately equal to 40μm by the year 2012 and be able to accommodate the silicon and organic CTE mismatch without resorting to expensive reliability solutions. The demand for fine pitch chip-to-substrate interconnects combined with the CTE mismatch, creates significant demands for overall interconnect compliance as means to ensure reliability, through increasing fatigue life. Stress-engineered compliant off-chip interconnects are capable meeting future interconnect demands. Such interconnects are fabricated from stress-engineered metal thin-films using traditional IC fabrication methods and can be integrated with wafer level packing. A systematic design approach has been used to optimize interconnect geometry for use with estimated operational conditions. Finite Element Analysis (FEA) and Regression modeling have been used to create macro-models of interconnect behavior to assist in the optimization of the geometric design. Copper and Copper-Molybdenum are considered as interconnect material and the development intrinsic stress within copper is investigated via sputter deposition.

Thermomechanical Design for Fine Pitch 3D-IC Packages

2012 ◽  
Vol 2012 (1) ◽  
pp. 001001-001009 ◽  
Author(s):  
Akihiro Horibe ◽  
Sayuri Kohara ◽  
Kuniaki Sueoka ◽  
Keiji Matsumoto ◽  
Yasumitsu Orii ◽  
...  
Keyword(s):  
Coefficient Of Thermal Expansion ◽  
Low Cost ◽  
High Stress ◽  
High Viscosity ◽  
Thermomechanical Properties ◽  
Design Parameters ◽  
Element Analysis ◽  
Package Design ◽  
Fine Pitch ◽  
Silicon Vias

Low stress package design is one of the greatest challenges for the realization of reliable 3D integrated devices, since they are composed of elements susceptible to failures under high stress such as thin dies, metal through silicon vias (TSVs), and fine pitch interconnections. In variety of package components, an organic interposer is a key to obtain low cost modules with high density I/Os. However, the large mismatch in coefficient of thermal expansion (CTE) between silicon dies and organic laminates causes high stress in an organic package. The major parametric components in 3D devices are dies with /without Cu-TSVs, laminates, bumps, and underfill layers. Especially, the die thicknesses and underfill properties are ones of the parameters that give us some range to control as package design parameters. In general, the underfill material with a high modulus and a low CTE is effective in reducing the stress in solder interconnections between the Si die and the laminate. However, the filler content of underfill materials with such mechanical properties generally results in high viscosity. The use of high viscous materials in between silicon dies in 3D modules can degrade process ability in 3D integration. In this study, we show that the interchip underfills in 3D modules have a wider mechanical property window than in 2D modules even with fine pitch interconnections consisting mostly of intermetallic compounds (IMCs). Also the finite element analysis results show that the optimization of the structural or thermomechanical properties of organic laminates and interchip underfill contributes to reduction of stressing thinned silicon dies which may have some risks to the device performance.

Wafer Level Assembly Technique Development for Fine Pitch Flip Chip 3D Die-to-Wafer Integration

2010 ◽  
Vol 2010 (1) ◽  
pp. 000548-000553
Author(s):  
Zhaozhi Li ◽  
Brian J. Lewis ◽  
Paul N. Houston ◽  
Daniel F. Baldwin ◽  
Eugene A. Stout ◽  
...  
Keyword(s):  
Flip Chip ◽  
Low Cost ◽  
Three Dimensional ◽  
Cost Effective ◽  
Market Demand ◽  
Wafer Level ◽  
Packaging Technology ◽  
Fine Pitch ◽  
3D Packaging ◽  
Assembly Technique

Three Dimensional (3D) Packaging has become an industry obsession as the market demand continues to grow toward higher packaging densities and smaller form factor. In the meanwhile, the 3D die-to-wafer (D2W) packaging structure is gaining popularity due to its high manufacturing throughput and low cost per package. In this paper, the development of the assembly process for a 3D die-to-wafer packaging technology, that leverages the wafer level assembly technique and flip chip process, is introduced. Research efforts were focused on the high-density flip chip wafer level assembly techniques, as well as the challenges, innovations and solutions associated with this type of 3D packaging technology. Processing challenges and innovations addressed include flip chip fluxing methods for very fine-pitch and small bump sizes; wafer level flip chip assembly program creation and yield improvements; and set up of the Pb-free reflow profile for the assembled wafer. 100% yield was achieved on the test vehicle wafer that has totally 1,876 flip chip dies assembled on it. This work has demonstrated that the flip chip 3D die-to-wafer packaging architecture can be processed with robust yield and high manufacturing throughput, and thus to be a cost effective, rapid time to market alternative to emerging 3D wafer level integration methodologies.

Wafer-Level, Compliant, Off-Chip Interconnects for Next-Generation Low-K Dielectric/Cu IC’s

2006 ◽  
Author(s):  
Karan Kacker ◽  
George Lo ◽  
Suresh K. Sitaraman
Keyword(s):  
Dielectric Material ◽  
Semiconductor Industry ◽  
Cost Effective ◽  
Organic Substrate ◽  
Integrative Approach ◽  
Wafer Level ◽  
Technology Roadmap ◽  
Cte Mismatch ◽  
Compliant Interconnect ◽  
Low K

Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors (ITRS) that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 70 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the CTE mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnect are less likely to crack or delaminate the low-K dielectric material in current and future ICs. The interconnects are also potentially cost effective as they can be fabricated using conventional wafer fabrication infrastructure. In this paper we present an integrative approach which uses interconnects with varying compliance and thus varying electrical preformance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermo-mechanical reliability concerns. We also discuss the reliability assessment results of helix interconnects assembled on an organic substrate. Results from mechanical characterization experiments are also presented.

COMPARISON OF FOWLP VS QFN PACKAGE FROM THERMAL ASPECT

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000248-000271 ◽  
Author(s):  
Qun Wan
Keyword(s):  
Thermal Performance ◽  
Flip Chip ◽  
Low Cost ◽  
Wafer Level ◽  
Element Analysis ◽  
Rf Power Amplifier ◽  
Thermal Test ◽  
Die Attach ◽  
Bottleneck Identification ◽  
Resistance Breakdown

The QFN package dominates IC industry with a small number of IOs due to its simplicity, maturity and low cost in mass production. However, as the industry progresses toward portability and smaller size, thinner and more compact packages such as Fan Out Wafer Level Package (FOWLP) is a better option/solution than QFN package. Due to its flip chip configuration, imbedded redistribution (RDL) interconnection and elimination of die attach layer, the FOWLP package has potential to surpass QFN package in thermal performance. This paper utilized a typical 3-stage RF power amplifier die as a thermal test vehicle, packaged with FOWLP and QFN, built FEA (Finite Element Analysis) thermal models and analyzed the thermal performance by thermal resistance breakdown and thermal bottleneck identification. Comparison of FOWLP and QFN shows that the heat paths and bottlenecks within each package are quite different. In QFN package, bottleneck lies in the die attach layer while in FOWLP package, it lies in the backend layers on the die and the RDL vias. FOWLP package may also require better thermal vias performance in PCB due to smaller footprint of LGA/Solder. Large horizontal heat spreading in a poorly design PCB may offset the thermal advantages in FOWLP package. The simulation results of both packages have good correlation with Infrared (IR) measurement of corresponding thermal test vehicles.

No Flow Underfill Process Development for Fine Pitch Flip Chip Silicon to Silicon Wafer Level Integration

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000708-000735 ◽  
Author(s):  
Zhaozhi Li ◽  
John L. Evans ◽  
Paul N. Houston ◽  
Brian J. Lewis ◽  
Daniel F. Baldwin ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Process Development ◽  
Low Cost ◽  
Three Dimensional ◽  
High Yield ◽  
Process Time ◽  
Assembly Process ◽  
Wafer Level ◽  
Fine Pitch

The industry has witnessed the adoption of flip chip for its low cost, small form factor, high performance and great I/O flexibility. As the Three Dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which is also a silicon to silicon assembly, is gaining more and more popularity. Most flip chip packages require underfill to overcome the CTE mismatch between the die and substrate. Although the flip chip to wafer assembly is a silicon to silicon integration, the underfill is necessary to overcome the Z-axis thermal expansion as well as the mechanical impact stresses that occur during shipping and handling. No flow underfill is of special interest for the wafer level flip chip assembly as it can dramatically reduce the process time as well as bring down the average package cost since there is a reduction in the number of process steps and the dispenser and cure oven that would be necessary for the standard capillary underfill process. Chip floating and underfill outgassing are the most problematic issues that are associated with no flow underfill applications. The chip floating is normally associated with the size/thickness of the die and volume of the underfill dispensed. The outgassing of the no flow underfill is often induced by the reflow profile used to form the solder joint. In this paper, both issues will be addressed. A very thin, fine pitch flip chip and 2x2 Wafer Level CSP tiles are used to mimic the assembly process at the wafer level. A chip floating model will be developed in this application to understand the chip floating mechanism and define the optimal no flow underfill volume needed for the process. Different reflow profiles will be studied to reduce the underfill voiding as well as improve the processing yield. The no flow assembly process developed in this paper will help the industry understand better the chip floating and voiding issues regarding the no flow underfill applications. A stable, high yield, fine pitch flip chip no flow underfill assembly process that will be developed will be a very promising wafer level assembly technique in terms of reducing the assembly cost and improving the throughput.

Mechanical and Electrical Study of Linear Spring and J-Spring

2002 ◽  
Author(s):  
Lunyu Ma ◽  
Qi Zhu ◽  
Suresh K. Sitaraman
Keyword(s):  
Integrated Circuit ◽  
Numerical Models ◽  
Low Cost ◽  
Stress Gradient ◽  
Electrical Characteristics ◽  
Wafer Level ◽  
Technology Roadmap ◽  
Linear Spring ◽  
Compliant Interconnect ◽  
Institute Of Technology

The integrated circuit (IC) fabrication technology continues to push the limits of microelectronics packaging technologies. Today millions of transistors can be fabricated in a chip of about 1 cm × 1 cm in size, and the required I/O density is about 1600/cm2. Although tremendous advances have been made in die to substrate interconnect technologies as well as substrate/PWB technologies, these advances have not kept pace with advances in semiconductor technology, and therefore, continue to be a bottleneck for further advances in semiconductor technologies. In addition to fabrication constraints, low cost and reliability are other requirements that affect interconnect development. Wafer-level Packaging (WLP) is an effective solution to address some of these issues. A compliant interconnect, called “J-Spring”, has been proposed and developed at Georgia Institute of Technology. Although based on the same concept of inherent stress-gradient used in the linear spring, the J-Spring will provide greater in-plane compliance. These compliant interconnects can be fabricated in batch at wafer level and the pitch can be as low as 30 μm. The fine pitch can meet and exceed the requirements of International Technology Roadmap for Semiconductor (ITRS) for 2011 [ITRS, 2001] and beyond. J-Springs with different radius, angle, width, and release length have been fabricated on a test wafer. Numerical model has been created to determine the release height based on J-Spring geometry and stress gradients. Also, the compliance of J-Spring has been determined in three orthogonal directions using parametric numerical models. The compliance of J-Spring is compared with the compliance of the linear spring. The proposed compliant interconnects can accommodate the differential displacement due to CTE mismatch between the die and the substrate. In addition, to their mechanical characteristics, their electrical characteristics have been studied as well. The electrical characteristics are dependent on the geometry, dimensions and the materials used.

Improvement of Plated Copper Adhesion in Glass Interposer Applications

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001807-001826
Author(s):  
Simon Bamberg ◽  
Vijay Sukumaran ◽  
Venky Sundaram ◽  
Rao Tummala ◽  
Johannes Etzkorn ◽  
...  
Keyword(s):  
Low Cost ◽  
Polymer Surface ◽  
Electrical Performance ◽  
Organic Substrates ◽  
Thin Glass ◽  
Fine Pitch ◽  
Cte Mismatch ◽  
Glass Interface ◽  
Wet Chemical ◽  
Chemical Metallization

Glass interposers offer a compelling alternative to silicon interposers with highest I/Os and excellent electrical performance, with potential for low cost from large panel processing. For sub-32nm IC nodes and 3D-IC packages at fine I/O pitch, organic substrates are reaching their limits in terms of I/Os, design rules and CTE mismatch. Glass offers the best combination of electrical insulation, dimensional stability, CTE match to Si ICs, and flat, smooth surfaces for ultra-fine line lithography. The biggest challenge in glass interposers is the formation and metallization of ultra-fine pitch through vias. The formation of small via diameters in thin glass substrate have been demonstrated. The focus of this paper will be on wet metallization of glass interposer with through via, and addressing the challenge of providing reliable adhesion on the copper-to-glass interface. Two main approaches are currently pursued in the wet-chemical metallization of glass interposers: the electroless and electrolytic copper deposition on a) bare glass with photo-structured or laser-ablated through vias and b) the deposition on an intermediate polymer surface layer, requiring glass metallization only on the via sidewalls. Therefore, in addition to the analysis and optimization of adhesion-improving techniques on different glass types, their performance on different polymer liners is also assessed. The techniques include surface conditioning with cationic polyectrolytes and deposition of silica. The effect of the above surface pretreatments on plated copper adhesion is analyzed and the results provide guidelines for reliable glass interposer TPV metallization.

Alternative Compliant Interconnects: Thermo-Mechanical Reliability, Design and Testing

2001 ◽  
Author(s):  
Lunyu Ma ◽  
Qi Zhu ◽  
Suresh Sitaraman
Keyword(s):  
Low Cost ◽  
Fabrication Process ◽  
Design Parameters ◽  
Electronic Packages ◽  
Wafer Level ◽  
Free Standing ◽  
Reliability Design ◽  
Fine Pitch ◽  
Conventional Photolithography ◽  
Design And Testing

Abstract Two types of novel compliant interconnects are being proposed in this paper. The advantages of these two types of compliant interconnects are: accommodation of the mismatch due to different thermal expansions in electronic packages, integration with wafer-level fabrication process, low cost, fine pitch and high I/O density. The first type is a highly-compliant cantilevered spring interconnect for the next generation packaging and probing technology. To understand the reliability of the package with this novel compliant spring interconnect structure and the typical behavior of sliding contact, test vehicles with different orientations of the cantilevered springs (21 μm pitch) have been fabricated, assembled and subjected to thermal cycling test. In-situ resistance and temperature measurements have been conducted. The second type is a compliant free-standing interconnect, One-Turn Helix (OTH) structure. This structure is built as an one-turn strip helix in order to get good compliance in space. It can be fabricated through conventional photolithography-based IC fabrication process. Optimal design parameters have been identified for this structure taking into consideration the thermo-mechanical and electrical behavior of this unique structure.

Assembly Process Development for Fine Pitch Flip Chip Silicon-to-Silicon 3D Wafer Level Integration with No Flow Underfill

2010 ◽  
Vol 7 (3) ◽  
pp. 146-151 ◽  
Author(s):  
Zhaozhi Li ◽  
Sangil Lee ◽  
Brian J. Lewis ◽  
Paul N. Houston ◽  
Daniel F. Baldwin ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Process Development ◽  
Low Cost ◽  
Three Dimensional ◽  
Process Time ◽  
Wafer Level ◽  
Fine Pitch ◽  
3D Packaging ◽  
Small Form Factor

The industry has witnessed the adoption of the flip chip for its low cost, small form factor, high performance, and great I/O flexibility. As three-dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which is also a silicon-to-silicon assembly, is gaining more and more popularity. No flow underfill is of special interest for the wafer level flip chip assembly, as it can dramatically reduce the process time and the cost per package, due to the reduction in the number of process steps as well as the dispenser and cure oven that would otherwise be necessary for the standard capillary underfill process. This paper introduces the development of a no flow underfill process for a sub-100 micron pitch flip chip to CSP wafer level assembly. Challenges addressed include the no flow underfill reflow profile study, underfill dispense amount study, chip floating control, underfill voiding reduction, and yield improvement. Also, different no flow underfill candidates were investigated to determine the best performing processing material.

Application of a Ag Ductile Layer in Minimizing Si Die Stresses in LDMOS Packages

2014 ◽  
Vol 605 ◽  
pp. 372-375
Author(s):  
Roselita Fragoudakis ◽  
Michael A. Zimmerman ◽  
Anil Saigal
Keyword(s):  
Layer Thickness ◽  
Thermal Stresses ◽  
Low Cost ◽  
Substrate Material ◽  
Ductile Material ◽  
Element Analysis ◽  
Cu Substrate ◽  
Die Stress ◽  
Cte Mismatch ◽  
Ductile Layer

Lateral Diffused Metal Oxide Semiconductors (LDMOS) normally have a Cu-W flange, whose CTE is matched to Si. Low cost Cu substrate material provides 2X high thermal conductivity, and along with a AuSi eutectic solder is recommended for optimal thermal performance. However, the CTE mismatch between Cu and Si can lead to failure of the semiconductor as a result of die fracture, due to thermal stresses developed during the soldering step of the manufacturing process. Introducing a Ag ductile layer is very important in minimizing such thermal stresses and preventing catastrophic failure of the semiconductor. Ag is a ductile material electroplated on the Cu substrate to absorb stresses developed during manufacturing due to the CTE mismatch between Si and Cu. The Ag layer thickness affects the magnitude of the resulting thermal stresses. This study attempts to measure the yield strength of the Ag layer, and examines the optimal layer thickness to minimize die stresses and prevent failure. The yield stress of the ductile layer deposited on a Cu flange was measured by nanoindentation. The Oliver and Pharr method was applied to obtain modulus of elasticity and yield depth of Ag. A finite element analysis of the package was performed in order to map die stress distribution for various ductile layer thicknesses. The analysis showed that increasing the ductile layer thickness up to 0.01 - 0.02 mm, decreases the Si die stresses.

Sign in / Sign up

Export Citation Format

Share Document