Study on the vertical ultrasonic vibration-assisted nanomachining process on single-crystal silicon

2021 ◽  
pp. 1-29
Author(s):  
Jiqiang Wang ◽  
Yanquan Geng ◽  
Zihan Li ◽  
Yongda Yan ◽  
Xichun Luo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ultrasonic Vibration ◽  
Normal Load ◽  
Silicon Crystal ◽  
Brittle Materials ◽  
Single Crystal Silicon ◽  
Damage Mechanism ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Transmission Electron

Abstract Subsurface damage that is caused by mechanical machining is a major impediment to the widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro- or micromachining could facilitate shallow subsurface damage compared with conventional machining. However, the subsurface damage that was induced by ultrasonic vibration-assisted nanomachining on hard–brittle silicon crystal has not yet been thoroughly investigated. In this study, we used a tip-based ultrasonic vibration-assisted nanoscratch approach to machine nanochannels on single-crystal silicon, to investigate the subsurface damage mechanism of the hard–brittle material during ductile-machining. The material removal state, morphology, and dimensions of the nanochannel, and the effect of subsurface damage on the scratch outcomes were studied. The materials were expelled in rubbing, plowing, and cutting mode in sequence with an increasing applied normal load and the silicon was significantly harder than the pristine material after plastic deformation. Transmission electron microscope analysis of the subsurface demonstrated that ultrasonic vibration-assisted nanoscratching led to larger subsurface damage compared with static scratching. The transmission electron microscopy results agreed with the Raman spectroscopy and molecular dynamic simulation. Our findings are important for instructing ultrasonic vibration-assisted machining of hard–brittle materials at the nanoscale level.

Influences of Silicon Crystal Anisotropy in Nano-Machining Processes Using AFM

2013 ◽  
Author(s):  
Yachao Wang ◽  
Jing Shi ◽  
Xinnan Wang
Keyword(s):  
Normal Load ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Transformation Mechanism ◽  
Machining Processes ◽  
Crystal Silicon ◽  
Normal Loading ◽  
Crystal Direction ◽  
Four Levels ◽  
Cutting Mechanisms

Atomic force microscope (AFM) machining has the potential to become an essential technology for manufacturing micro/nano-scale devices. In literature, this technique has been successfully employed to machine various types of materials, including semiconductor materials and metals. However, the effect of material anisotropy in terms of crystal direction is rarely considered in the existing studies. In this paper, we conduct nano-scratching experiments on the (1 0 0) plane of single crystal silicon surface with a diamond tip in an AFM machine. Three levels of crystal direction of nano-scratching are considered. Four levels of normal loading are applied. Machining performances are mainly evaluated by the groove morphology. Also, the wear coefficients and scratch ratio are calculated to the anti-wear performance. Based on the pile up volume and cutting volume respectively, the presence of the ploughing and cutting mechanisms is determined. The experiment results indicate that the applied normal load significantly affect the groove depth and debris morphology. The scratching direction has a pronounced effect on the friction coefficient and the calculated scratching hardness. By observing the debris morphology and cracks formation, the dependence of ductile to brittle transformation mechanism of silicon machining on the crystal direction is also discussed.

Wear Tests and Pull-Off Force Measurements of Single Asperities by Using Parallel Leaf Springs Installed on an Atomic Force Microscope

1999 ◽  
Vol 122 (3) ◽  
pp. 639-645 ◽  
Author(s):  
Yasuhisa Ando
Keyword(s):  
Single Crystal ◽  
Adhesion Force ◽  
Normal Load ◽  
Single Crystal Silicon ◽  
Leaf Spring ◽  
Wear Volume ◽  
Crystal Silicon ◽  
Single Leaf ◽  
Leaf Springs ◽  
Gold Plate

At the micro-scale level, the adhesion force dominates the friction force when the normal load approaches zero. For determining the effects of micro wear on the adhesion (pull-off) force, the wear-induced changes in surface topography of asperities and the pull-off force between the asperities and leaf springs were determined. First, single asperities were formed on a single-crystal gold plate and the asperities were rubbed with a silicon leaf spring attached to an AFM (atomic force microscope). A focused ion beam (FIB) system was used to form gold pyramid-shaped asperities on the surface of a single crystal gold plate. The FIB was also used to create the two types of single crystal silicon leaf springs tested here; single and parallel. The single leaf spring was created by flattening the probe-head of a commercially available AFM cantilever for AC mode. The parallel leaf spring was created by removing the central portion of a single-crystal silicon beam (25 μm×50 μm×300 μm). For the single leaf spring, the pull-off force no longer increased when the sliding distance exceeded 5 mm at a load of more than 200 nN. On the other hand, for the parallel leaf spring, the pull-off force increased monotonically with sliding distance, showing a more rapid increase at the higher normal load. The worn area of the asperity peak (measured by using an ordinary AFM probe) was proportional to the pull-off force. The wear volume per unit distance (i.e., wear rate) was estimated from the change in pull-off force, and was found to increase monotonically with the external load. There was no effect of adhesion force on the wear volume. [S0742-4787(00)01102-4]

A study of 2 MeV oxygen implantation to form deeply buried SiO2 layers

1989 ◽  
Vol 4 (5) ◽  
pp. 1227-1232 ◽  
Author(s):  
J. J. Grob ◽  
A. Grob ◽  
P. Thevenin ◽  
P. Siffert ◽  
C. d'Anterroches ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Single Step ◽  
Annealing Process ◽  
Dislocation Network ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Distribution Moments ◽  
Best Fit

Oxygen ions were implanted into (100) oriented single crystal Si at energies in the range of 0.6 to 2 MeV at normal and oblique (60°) incidences. Oxygen concentration profiles were measured using the 16O(d, α)14N nuclear reaction for 900 keV deuterons. The experimentally measured oxygen distributions were subsequently fitted to the theoretical profiles calculated assuming the Pearson VI distribution. The distribution moments (Rp, ΔRp, ΔR⊥ skewness, and kurtosis) were deduced as the best fit parameters and compared to the computer simulation results (TRIM 87 and PRAL). Whatever the calculation method, the measured Rp and ΔRp values are close to those predicted by the theory. Deeply buried SiO2 layers were formed using a single step implantation and annealing process. A dose of 1.8 × 1018/cm2 of 2 MeV O+ was implanted into the Si substrate maintained at a temperature of 550 °C. The implanted samples were characterized using the Rutherford backscattering (RBS)/channeling technique and cross-sectional transmission electron microscopy (XTEM). The implanted samples were subsequently annealed at 1350 °C for 4 h in an Ar ambient. The annealing process results in creating a continuous SiO2 layer, 0.4 μm thick below a 1.6 μm thick top single crystal silicon overlayer. The buried SiO2 layer contains the well-known faceted Si inclusions. The density of dislocations within the top Si layer remains lower than the XTEM detection limit of 107/cm2. Between the Si overlayer and the buried SiO2 a layer of faceted longitudinal SiO2 precipitates is present. A localized dislocation network links the precipitates to the buried SiO2 layer.

The Effect of Starting Silicon Crystal Structure on Photoluminescence Intensity of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
W. B. Dubbelday ◽  
S. D. Russell ◽  
K. L. Kavanagh
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Luminescent Materials ◽  
Photoluminescence Intensity ◽  
Crystal Silicon ◽  
Chemical Etch ◽  
Porosity Measurements

ABSTRACTIn previous work we reported that porous silicon (PS) films formed using a dilute HF:HNO3 chemical etch on polycrystalline, implant damaged single crystal, or amorphous starting material have luminescent characteristics that differ from PS fabricated on single crystal silicon1. Polycrystalline and implant damaged porous silicon exhibits brighter luminescence compared to single crystal silicon etched under identical conditions. No photoluminescence is detected from the porous amorphous silicon. In this work these effects are examined using HF:NaNO2 solutions with freely available NO2. The accelerated etching effects from work damage are reduced, and the PS from polycrystalline and implant damaged silicon luminesce with the same intensity as the PS from single crystal silicon. Again, etched amorphous silicon does not luminesce. TEM and EDX porosity measurements are used to determine the differences in structure and etching characteristics between the luminescent and non-luminescent materials.

Sign in / Sign up

Export Citation Format

Share Document