Wear Tests and Pull-Off Force Measurements of Single Asperities by Using Parallel Leaf Springs Installed on an Atomic Force Microscope

1999 ◽  
Vol 122 (3) ◽  
pp. 639-645 ◽  
Author(s):  
Yasuhisa Ando
Keyword(s):  
Single Crystal ◽  
Adhesion Force ◽  
Normal Load ◽  
Single Crystal Silicon ◽  
Leaf Spring ◽  
Wear Volume ◽  
Crystal Silicon ◽  
Single Leaf ◽  
Leaf Springs ◽  
Gold Plate

At the micro-scale level, the adhesion force dominates the friction force when the normal load approaches zero. For determining the effects of micro wear on the adhesion (pull-off) force, the wear-induced changes in surface topography of asperities and the pull-off force between the asperities and leaf springs were determined. First, single asperities were formed on a single-crystal gold plate and the asperities were rubbed with a silicon leaf spring attached to an AFM (atomic force microscope). A focused ion beam (FIB) system was used to form gold pyramid-shaped asperities on the surface of a single crystal gold plate. The FIB was also used to create the two types of single crystal silicon leaf springs tested here; single and parallel. The single leaf spring was created by flattening the probe-head of a commercially available AFM cantilever for AC mode. The parallel leaf spring was created by removing the central portion of a single-crystal silicon beam (25 μm×50 μm×300 μm). For the single leaf spring, the pull-off force no longer increased when the sliding distance exceeded 5 mm at a load of more than 200 nN. On the other hand, for the parallel leaf spring, the pull-off force increased monotonically with sliding distance, showing a more rapid increase at the higher normal load. The worn area of the asperity peak (measured by using an ordinary AFM probe) was proportional to the pull-off force. The wear volume per unit distance (i.e., wear rate) was estimated from the change in pull-off force, and was found to increase monotonically with the external load. There was no effect of adhesion force on the wear volume. [S0742-4787(00)01102-4]

Quantitative Analysis of the Micro Friction of Single Crystal Silicon

2016 ◽  
Vol 874 ◽  
pp. 375-380
Author(s):  
Ru Tian ◽  
Hong Tao Zhu ◽  
Chuan Zhen Huang ◽  
Jun Wang ◽  
Ao Liu ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Single Crystal ◽  
Material Removal ◽  
Normal Load ◽  
Single Crystal Silicon ◽  
Interfacial Friction ◽  
Experiment Data ◽  
Crystal Silicon ◽  
Single Asperity

The single-asperity friction of polished single crystal silicon using a cone with a spherical apex tip was quantitatively studied concerning the influence of normal load and scratching cycles. Specific friction equations were presented and the interfacial friction equations were determined by fitting the experiment data obtained in the scratching tests. The influence of different scratch conditions to both the interfacial fiction and the plowing friction was analyzed. This paper aims to understand the mechanisms of friction and material removal of single crystal silicon in micro and nanocutting or polishing.

Study on the vertical ultrasonic vibration-assisted nanomachining process on single-crystal silicon

2021 ◽  
pp. 1-29
Author(s):  
Jiqiang Wang ◽  
Yanquan Geng ◽  
Zihan Li ◽  
Yongda Yan ◽  
Xichun Luo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ultrasonic Vibration ◽  
Normal Load ◽  
Silicon Crystal ◽  
Brittle Materials ◽  
Single Crystal Silicon ◽  
Damage Mechanism ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Transmission Electron

Abstract Subsurface damage that is caused by mechanical machining is a major impediment to the widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro- or micromachining could facilitate shallow subsurface damage compared with conventional machining. However, the subsurface damage that was induced by ultrasonic vibration-assisted nanomachining on hard–brittle silicon crystal has not yet been thoroughly investigated. In this study, we used a tip-based ultrasonic vibration-assisted nanoscratch approach to machine nanochannels on single-crystal silicon, to investigate the subsurface damage mechanism of the hard–brittle material during ductile-machining. The material removal state, morphology, and dimensions of the nanochannel, and the effect of subsurface damage on the scratch outcomes were studied. The materials were expelled in rubbing, plowing, and cutting mode in sequence with an increasing applied normal load and the silicon was significantly harder than the pristine material after plastic deformation. Transmission electron microscope analysis of the subsurface demonstrated that ultrasonic vibration-assisted nanoscratching led to larger subsurface damage compared with static scratching. The transmission electron microscopy results agreed with the Raman spectroscopy and molecular dynamic simulation. Our findings are important for instructing ultrasonic vibration-assisted machining of hard–brittle materials at the nanoscale level.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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